N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption
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Comparing to un-doped Zn15Sb85 material, N-doped Zn15Sb85 material had higher crystallization temperature, lower conductivity and better data retention. The optical band gap was derived from the transmittance spectra and a significant increase was observed with increasing nitrogen doping concentration. The measurement of atomic force microscopy indicated that the crystallization was inhibited and the surface of thin films became smoother after N doping. Phase change memory devices based on N-doped Zn15Sb85 thin film were fabricated to test and verify their electrical properties.
KeywordsPhase Change Material Nitrogen Doping Phase Change Memory Reset Operation Phase Change Memory Cell
The authors would like to acknowledge financial support of the National High Technology Development Program of China (2008AA031402) and the Scientific Research Fund Project of Jiangsu University of Technology (KYY09027) and the Natural Science Foundation of Jiangsu Province (BK20130233).