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N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption

  • Xiaoqin Zhu
  • Yifeng Hu
  • Jianzhong Xue
  • Yongxing Sui
  • Weihua Wu
  • Long Zheng
  • Li Yuan
  • Sannian Song
  • Zhitang Song
  • Shunping Sun
Article

Abstract

Comparing to un-doped Zn15Sb85 material, N-doped Zn15Sb85 material had higher crystallization temperature, lower conductivity and better data retention. The optical band gap was derived from the transmittance spectra and a significant increase was observed with increasing nitrogen doping concentration. The measurement of atomic force microscopy indicated that the crystallization was inhibited and the surface of thin films became smoother after N doping. Phase change memory devices based on N-doped Zn15Sb85 thin film were fabricated to test and verify their electrical properties.

Keywords

Phase Change Material Nitrogen Doping Phase Change Memory Reset Operation Phase Change Memory Cell 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors would like to acknowledge financial support of the National High Technology Development Program of China (2008AA031402) and the Scientific Research Fund Project of Jiangsu University of Technology (KYY09027) and the Natural Science Foundation of Jiangsu Province (BK20130233).

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Xiaoqin Zhu
    • 1
  • Yifeng Hu
    • 1
  • Jianzhong Xue
    • 1
  • Yongxing Sui
    • 1
  • Weihua Wu
    • 1
  • Long Zheng
    • 1
  • Li Yuan
    • 1
  • Sannian Song
    • 2
  • Zhitang Song
    • 2
  • Shunping Sun
    • 3
  1. 1.School of Mathematics and PhysicsJiangsu University of TechnologyChangzhouChina
  2. 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information TechnologyChinese Academy of SciencesShanghaiChina
  3. 3.School of Materials EngineeringJiangsu University of TechnologyChangzhouChina

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