Optical properties of pulse plated SnSe films



SnSe films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles. The films were single phase with orthorhombic structure. Optical absorption measurements indicated a band gap in the range of 1.28–1.50 eV with decrease of duty cycle. Transmission spectra exhibited interference fringes. Using the envelope method, refractive index was calculated. From the refractive index and extinction coefficient data, real and imaginary part of dielectric constant were estimated. Optical conductivity was evaluated from the absorption coefficient and refractive index data. Optical data were analysed by the single-effective oscillator model.


Dielectric Constant Duty Cycle Optical Conductivity SnSe Diselenide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 1.
    P.G. Naik, C.F. Desai, R.C. Shah, S.S. Siddiqui, SPIE Int. Soc. Opt. Eng. 547, 2733 (1996)Google Scholar
  2. 2.
    J.J. Loferski, J. Appl. Phys. 27, 777 (1956)CrossRefGoogle Scholar
  3. 3.
    G.R. Valiukonis, D.A. Guseinova, G. Krivaite, A. Sileika, Phys. Status Solidi B 135, 299 (1986)CrossRefGoogle Scholar
  4. 4.
    R.D. Engelken, A.K. Berry, T.P. Van Doren, J.L. Boone, A. Shahnazary, J. Electrochem. Soc. 133, 581 (1986)CrossRefGoogle Scholar
  5. 5.
    K.J. John, B. Pradeep, E. Mathai, J. Mater. Sci. 29, 1581 (1994)CrossRefGoogle Scholar
  6. 6.
    D.T. Quan, Thin Solid Films 149, 197 (1987)CrossRefGoogle Scholar
  7. 7.
    D. Pathinettam Padiyan, A. Marikani, K.R. Murali, Cryst. Res. Technol. 35, 949 (2000)CrossRefGoogle Scholar
  8. 8.
    B. Subramanian, T. Mahalingam, C. Sanjeeviraja, M. Jayachandran, M.J. Chockalingam, Thin Solid Films 357, 119 (1999)CrossRefGoogle Scholar
  9. 9.
    R. Indirajith, T.P. Srinivasan, K. Ramamurthi, R. Gopalakrishnan, Curr. Appl. Phys. 10, 1402–1406 (2010)CrossRefGoogle Scholar
  10. 10.
    R. Teghil, A. Giardini-Guuidoni, A. Mele, S. Piccirillo, G. Pizzella, V. Marotta, Thin Solid Films 241, 126 (1994)CrossRefGoogle Scholar
  11. 11.
    J.P. Singh, J. Mater. Sci.: Mater. Electron. 2, 105 (1991)Google Scholar
  12. 12.
    K. Ananthi, K. Thilakavathy, N. Muthukumarasamy, S. Dhanapandian, K.R. Murali, J. Mater. Sci.: Mater. Electron. 23, 1338–1341 (2012)Google Scholar
  13. 13.
    N. Kumar, V. Sharma, N. Padha, N.M. Shah, M.S. Desai, C.J. Panchal, I.Yu. Protsenko, Cryst. Res. Technol. 45, 53–58 (2010)CrossRefGoogle Scholar
  14. 14.
    H.Y. Joo, H.J. Kim, J. Vac. Sci. Technol., A 17, 862 (1999)CrossRefGoogle Scholar
  15. 15.
    H.S. Soliman, D.A. Abdel Hady, K.F. Abdel Rahman, S.B. Youssef, A.A. El-Shazly, Phys. A 216, 77–84 (1995)CrossRefGoogle Scholar
  16. 16.
    A.R. Forouhi, I. Bloomer, Phys. Rev. B38, 1865 (1988)CrossRefGoogle Scholar
  17. 17.
    A. Goswami, Thin film fundamentals (New Delhi, New Age International, 2005)Google Scholar
  18. 18.
    P. Sharma, S.C. Katyal, J. Phys. D Appl. Phys. 40, 2115 (2007)CrossRefGoogle Scholar
  19. 19.
    S.H. Wemple, M. DiDomenico, Phys. Rev. B3, 1338 (1971)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Electrochemical Materials Science DivisionCSIR-CECRIKaraikudiIndia

Personalised recommendations