Influence of Mn doping on structural, electrical and magnetic properties of (0.90)BiFeO3–(0.10)BaTiO3 composite
- 367 Downloads
Structural, electrical and magnetic properties of chemically synthesized polycrystalline Mn doped (0.90)BiFeO3–(0.10)BaTiO3 composites [(0.90)BiFe1−xMnxO3–(0.10)BaTiO3 (x = 0.0, 0.03, 0.05 and 0.10)] were studied. The dielectric constant was observed to decrease when frequency was increased from 20 Hz to 1 MHz and increased with the increase in temperature from 313 to 773 K. An interesting correlation between the antiferromagnetic Neel temperature (TN) of bismuth ferrite and temperature dependent dielectric constant was observed. The calculated values of activation energies were in the order of 0.25–0.74 eV (<1.0 eV) and decreases with an increase of Mn concentration. The variation of a.c. conductivity obeyed the Jonscher’s power law (σ ac ∝ ω s ). The observed value of exponent‘s’ were in the range 0.09 < ‘s’ < 0.78 (<1.0) for all the sample at temperature ranging from 473 to 598 K. There was a systematic increase in the value of spontaneous magnetization on increasing Mn concentration.
KeywordsDielectric Loss BaTiO3 BiFeO3 Spontaneous Magnetization Bismuth Nitrate
M.S is greatful to the Sharda University of India for providing financial support and leave for carrying out this work at Motilal Nehru National Institute of Technology Allahabad. N.K is thankful to Department of Science and Technology, Government of India for funding (SR/FTP/PS-04/2008) and director MNNIT for the support. N.K also acknowledges consistent support provided by the Director MNNIT Allahabad and Centre for Interdisciplinary Research (CIR) MNNIT Allahabad for the access of centered research facilities. M.K is thankful to National Facility installed in Magnetics & Advanced Ceramics Laboratory at IIT Delhi for magnetic measurements.
- 6.G. J. Mac Dougall, H. M. Christen, W. Siemons, M. D. Biegalski, J. L. Zarestky, S. Liang, E. Dagotto, S. E. Nagler, Phys. Rev. B 85, 100406 (R) (2012)Google Scholar
- 13.L. Fang, J. Lui, S. Ju, F. Zheng, W. Dong, M. Shen, Appl. Phys. Lett. 242501 (2010)Google Scholar
- 20.R.D. Shannon, Acta Crystallogr. Sect. A: Cryst. Phys. Diffr. Theor. Gen. Crystallogr. 32, 751 (1976)Google Scholar
- 24.Z.X. Cheng, A.H. Li, X.L. Wang, S.X. Dou, K. Ozawa, H. Kimura, S.J. Zhang, T.R. Shrout, J. Appl. Phys. 103, 07E507 (2008)Google Scholar
- 38.K. Prasad, S. Bhagat, K. Amarnath, S.N. Choudhary, K.L. Yadav, Mater. Sci. Poland 28, 317 (2010)Google Scholar
- 42.I. Sosnowska, W. Schafer, W. Kockelmann, K. H. Anderson, I. O. Troyanchuk, Appl. Phys. A: Mater. Sci. Process. A 74, S1040 (2002)Google Scholar