Conduction and field induced degradation in thin ZrO2 films sputtered in nitrogen containing plasma on silicon
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This paper deals with the electrical and stress induced degradation of reactively sputtered ZrO2/Si interface deposited in N2 containing plasma and pure argon ambient. MOS C–V and I–V techniques were used for interface characterization. Leakage current and flat band shifts were compared for ZrO2 films deposited with and without N2 containing plasma. The effect of current stress and post deposition annealing carried out on the samples deposited in different ambient was investigated. The annealed devices showed better electrical and reliability characteristics. The flat band voltage shifts towards negative value in annealed devices on being stressed, indicating positive charge trapping in the high-k dielectric layer. The flat band voltage saturates faster when stressed with higher current density. The oxide charge density increases from 4.5 × 1012 cm−2 for as deposited samples to 5.6 × 1012 cm−2 on application of stress. The samples grown in pure argon ambient showed enhanced leakage when compared with samples grown in nitrogen ambient on application of stress .
KeywordsHfO2 Flat Band Current Stress Pure Argon Ambient Capacitance Voltage
The authors would like to express their sincere thanks to Dr. M. D. Tiwari, Director and Prof. M. Radhakrishna for their constant support and encouragement.
- 4.F.A. Cotton, G. Wilkinson, C.A. Murillo, M. Bochmann, Advanced inorganic chemistry (Wiley, New York, 2000)Google Scholar
- 11.C.S. Kang et al., Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics. Appl. Phys. Lett. 81, 2539–2541 (2002)Google Scholar
- 12.H. Iwai et al. Tech. Digest. Int. Electron Devices Meeting, IEEE (2002)Google Scholar
- 13.C.H. Choi et al. Tech. Digest. Int. Electron Devices Meeting, 865 (2002)Google Scholar
- 15.T.-C. Yang, K.C. Saraswat, Effect of physical stress on the degradation on thin SiO2 films under electrical stress. IEEE Trans. Electron. Dev. 47, 4 (2000)Google Scholar
- 18.M.H. Choudary, M.A. Mannan, S.A. Mahmood, High-k Dielectrics for submicron MOSFET. IJETSE Int. J. Emerg. Technol. Sci. Eng. 2, 2 (2010)Google Scholar
- 21.A.W. Strong, E.Y. Wu, Rolf-Peter Vollertsen, J. Sune, G. La Rosa, T.D. Sullivan, S.E. Rauch. Reliability wearout mechanisms in advanced CMOS technologies, IEEE Press Series on Microelectronic Systems, Chapter 2 (2009)Google Scholar
- 23.R. Ashwath, D. Anshuman, G. Manish, B.R. Singh. Effect of nitrogen containing plasma on interface properties of sputtered ZrO2 thin films on silicon. Material Science in Semiconductor Processing (Accepted)Google Scholar
- 24.P.C. McIntyre, Bulk and Interfacial oxygen defects in HfO2 gate dielectric stacks. Electrochem. Soc. Trans. 11(4), 235–249 (2007)Google Scholar
- 28.E.H. Nicollian, J.R. Brews, MOS (metal oxide semiconductor) physics and technology, 2nd edn. (Wiley-Interscience, Hoboken, 2002)Google Scholar
- 32.JESD35-A “Procedure for the Wafer Level Testing of Thin Dielectrics” JEDEC Solid State Technology Association (2001)Google Scholar