Low-temperature spin spray deposited ferrite/piezoelectric thin film magnetoelectric heterostructures with strong magnetoelectric coupling
We report low-temperature spin spray deposited Fe3O4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 °C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4/ZnO ME heterostructures have much lower deposition temperature (<100 °C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.
KeywordsPiezoelectric Layer Piezoelectric Coefficient Photonic Sensor Effective Magnetic Field Bias Magnetic Field
This work is financially supported by NSF CAREER awards 0746810 and by the United States Air Force Research Laboratory under contract number FA8721-05-C-0002. J.J., K.N., and G.E. acknowledge support from the Army Research Office through contract number W911NF-09-1-0435. Use of the Advanced Photon Source, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory, was supported by the U.S. DOE under Contract No. DE-AC02-06CH11357.
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