Efficient Mn-doped CdS quantum dot sensitized solar cells based on SnO2 microsphere photoelectrodes

  • Lu Liu
  • Miaoliang Huang
  • Zhang Lan
  • Jihuai Wu
  • Guanglu Shang
  • Guijing Liu
  • Jianming Lin


Mn-doped CdS quantum dot sensitized solar cells based on SnO2 microsphere photoelectrodes are prepared with successive ionic layer adsorption and reaction method. It is found that with Mn-doped CdS quantum dot sensitizers, the photovoltaic performance of the cells based on SnO2 microsphere photoelectrodes can obviously be enhanced. The reasons are owing to the improved light absorption and the expanded light absorption edge by doping Mn in CdS quantum dots. The electrochemical impedance spectroscopy analysis found that the cells with Mn-doped CdS quantum dot sensitized SnO2 microsphere photoelectrodes can efficiently suppress dark reaction, owing to the increased related resistance. Moreover, it is also found that the Mn-doped CdS quantum dot sensitized SnO2 microsphere photoelectrode can increase the electron diffusion lifetime in the cell. The power conversion efficiency of the cell with 4 wt% Mn-doped CdS quantum dot sensitizers can attain to 2.80 %, with 53 % enhancement compared with that of the CdS quantum dot sensitized cell (1.83 %).


SnO2 Power Conversion Efficiency Photovoltaic Performance SnS2 SnO2 Film 
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The authors would like to acknowledge the support of the National Natural Science Foundation of China (Nos. U1205112, 51002053), the Key Project of the Chinese Ministry of Education (212206), the Program for Prominent Young Talents in Fujian Province University, the Program for New Century Excellent Talents in Fujian Province University, and the Promotion Program for Yong and Middle-aged Teacher in Science and Technology Research of Huaqiao University (ZQN-YX102).


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© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Engineering Research Center of Environment-Friendly Functional Materials, Ministry of Education, Key Laboratory of Functional Materials for Fujian Higher Education, Institute of Materials Physical ChemistryHuaqiao UniversityXiamenChina

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