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Corrosion behavior of pure tin deposit under 55 °C/85 % RH reliability test

  • Min-Chi Yeh
  • Jyun Lin Li
  • Pei Jen Lo
  • Rick Yu
  • Cheng-Fu Yu
  • Ker-Chang Hsieh
Article
  • 92 Downloads

Abstract

With recent moves to implement lead-free manufacturing in the electronics industry, more attention is being paid to the use of tin. One of greatest limitations regarding the reliability of tin is the undesirable development of tin whiskers. Many factors have been identified as being the cause of these whiskers, though tin corrosion has not. Three types of tin deposit grain structures have been developed in an effort to reduce the growth of whisker formations as type (A) with vertical and regular grain boundary; type (B) with horizontal and irregular grain boundary; and type (C) as a combination of both vertical (the top layer) and horizontal (the bottom layer) grain structures. We kept a series of samples in an oven for 1 year at 55 °C/85 % RH (relative humidity), and then used focused ion beam to examine the corrosion microstructure that occurred three types of deposit structures. We found the preferred path of corrosion to occur along the grain boundary and that tin oxide enlarges the volume of the deposit. In order to release the compressive stress that developed during corrosion, whiskers were formed as the grain structure being vertical. Corrosion developed in different locations of various deposits made of the three grain structures. We studied resulting in whisker growth, cracking and the development of internal oxide.

Keywords

SnO2 Deposit Layer Whisker Growth Intermetallic Structure Corrode Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors acknowledge the financial support for this research provided by National Science Council, Grant No. NSC 98-2221-E-110-034–MY3.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Min-Chi Yeh
    • 1
  • Jyun Lin Li
    • 1
  • Pei Jen Lo
    • 1
  • Rick Yu
    • 1
  • Cheng-Fu Yu
    • 1
  • Ker-Chang Hsieh
    • 1
  1. 1.Department of Materials and Optoelectronic ScienceNational Sun Yat-Sen UniversityKaohsiungRepublic of China

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