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Electrical transport properties of layered structure bismuth oxide: Ba0.5Sr0.5Bi2V2O9

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Abstract

The layered structure bismuth oxide, Ba0.5Sr0.5Bi2V2O9, was prepared using solid state reaction technique. Room temperature X-ray diffraction study confirms the formation of the material with an orthorhombic crystal structure. The temperature dependent impedance parameters were investigated using an impedance analyzer in a wide range of frequencies (102–106 Hz) at different temperatures. The Nyquist plots reveal the presence of both grain and grain boundary effect above 275 °C. The bulk resistance of the material decreases with rise in temperature which shows negative temperature coefficient resistance behavior like semiconductor. The variation of ac electrical conductivity (σac) was measured, and the activation energy of the material found to be 0.36, 0.33, 0.34, 0.31 eV at 10, 50, 100 and 500 kHz respectively. Ac conductivity data were used to evaluate the density of states at Fermi level. From the dynamic light scattering and electrophoretic light scattering study, it is observed that the particle show excellent aqueous dispersion stability without any change in hydrodynamic size and zeta potential.

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Acknowledgments

The authors acknowledge the financial support through DRS-I of UGC under SAP for the development of research work at School of Physics, Sambalpur University.

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  1. Material Research Laboratory, School of Physics, Sambalpur University, Sambalpur, Odisha, India

    N. K. Mohanty, R. N. Pradhan, S. K. Satpathy, A. K. Behera, Banarji Behera & P. Nayak

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  1. N. K. Mohanty
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  2. R. N. Pradhan
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  3. S. K. Satpathy
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  4. A. K. Behera
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Correspondence to Banarji Behera.

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Mohanty, N.K., Pradhan, R.N., Satpathy, S.K. et al. Electrical transport properties of layered structure bismuth oxide: Ba0.5Sr0.5Bi2V2O9 . J Mater Sci: Mater Electron 25, 117–123 (2014). https://doi.org/10.1007/s10854-013-1559-6

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