Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology
Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 1013 to 1 × 1014 ions/cm2 at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 1014 ions/cm2 resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi2 was confirmed by X-ray analysis. Schottky barrier height was calculated from I–V measurements and the values drops down to 0.58 eV after irradiation at 1 × 1014 ions/cm2. The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi2 agglomeration and formation of Si-rich silicide islands.
KeywordsSchottky Barrier Height Silicide Phase Thin Film System Centered Lattice Structure Multimode Scan Probe Microscope
- 4.M. Ye, E.P. Burte, H. Ryssel, Nucl Instrum Methods Phys Res B 59, 528 (1991)Google Scholar
- 10.L.S. Wielunski, C.-D. Lien, B.-X. Liu, M.-A. Nicolet, Metastable Materials Formation by Ion Implantation (North-Holland, New York, 1982), p. 139Google Scholar
- 15.K. Maex, Mater Sci Eng R 11, 53 (1992)Google Scholar
- 17.H. Jeon, S. Kim, Japan. J Appl Phys 37, 4747 (1998)Google Scholar
- 23.J.F. Zeigler, J.P. Biersack, U. Littmark, The Stopping Range of Ions in Solids (Pergamon Press, New York, 1985)Google Scholar