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Journal of Materials Science: Materials in Electronics

, Volume 24, Issue 9, pp 3481–3489 | Cite as

Influence of vacuum annealing on the properties of SILAR CuInS2 thin films and optimization of annealing duration

  • B. Maheswari
  • M. Dhanam
Article
  • 178 Downloads

Abstract

The structural, compositional, morphological and optical properties of as-deposited and vacuum annealed CuInS2 thin films prepared by successive ionic layer adsorption and reaction method are studied by X-ray diffractometer, energy dispersive X-ray analyzer, scanning electron microscope and spectrophotometer respectively. The influence of vacuum annealing on the properties of CuInS2 (CIS) thin films is discussed, annealing duration has also been optimized and reported in this paper.

Keywords

Vacuum Annealing Anionic Solution Annealing Duration Chalcopyrite Structure SILAR Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors wish to acknowledge the Secretary, Management and the Principal of Kongunadu Arts and Science College, Coimbatore for their constant support. One of the authors (M.D.) wishes to thank UGC for the financial support extended by sanctioning through a major research project in this explored area of Physics.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Department of PhysicsKongunadu Arts and Science CollegeCoimbatoreIndia

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