Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si
- 307 Downloads
The effects of annealing methods on the crystallization process and microstructure of polycrystalline silicon (poly-Si) films obtained by aluminum-induced crystallization (AIC) of amorphous Si (a-Si) films were comparatively investigated. Glass/Al/a-Si structures were annealed by rapid thermal annealing (RTA) and conventional furnace at 500 °C for different times in Ar. As compared to furnace annealing, AIC of a-Si films annealed by RTA possesses a shorter period of nucleation time, a higher nucleation density and reduces the process time to form continuous poly-Si films. It is revealed that the continuous Si films obtained by both RTA and conventional furnace annealing are polycrystalline in nature, exhibiting good microstructures with Raman peaks at 518 cm−1 and full-width at half-maximums of 6.43–6.48 cm−1.
KeywordsRapid Thermal Annealing Furnace Annealing Conventional Furnace Rapid Thermal Annealing Process Rapid Thermal Annealing Treatment
The authors would like to acknowledge Professor Kwang-Leong Choy from the University of Nottingham for helpful discussion. This work is supported by the Ningbo Natural Science Foundation (No.2012A610120) and K.C.Wong Magna Fund in Ningbo University.
- 8.D. Dimova-Malinovska, O. Angelov, M. Sendova-Vassileva, V. Grigorov, M. Kamenova, Proceedings of 19th EPVSEC, (Paris, 2004), p. 371Google Scholar
- 10.J. Schneider, J. Klein, M. Muske, S. Gall, W. Fuhs, J. Non-Cryst, Solids 338–340, 127 (2004)Google Scholar
- 14.E. Stinzianni, K. Dunn, Z.Y. Zhao, M. Rane-Fondacaro, H. Efstathiadis, P. Haldar, IEEE 34th Photovoltaic Specialists Conference (PVSC), (2009), p. 001643Google Scholar
- 25.C.L. Wang, D.W. Fan, C.B. Wang, Z.R. Geng, H.L. Ma, S.F. Miao, Sci. China Phys. Mech. Astron 53, 1 (2010)Google Scholar