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Synthesis and characterization of low particle size nanocrystalline SnSe thin films

  • I. K. El Zawawi
  • Manal A. Mahdy
Article

Abstract

Tin selenide (SnSe) nanocrystalline thin films of different thickness from 15 to 70 nm were prepared by inert gas condensation technique. Argon gas flow and substrate temperature were kept constant during deposition process at 2 × 10−3 Torr and 27 °C respectively. Polycrystalline orthorhombic phase structured was deduced for the prepared SnSe ingot powder by X-ray diffraction pattern. The grazing incident in-plane X-ray diffraction (GIIXD) pattern showed nanocrystalline orthorhombic structure for deposited SnSe thin film. The TEM micrographs showed that thin films were nanocrystalline with particle size in the range from 2 to 5.7 nm. The optical band gap Eg of the thin films due to direct allowed transition have values ranging from 2.5 to 2.13 eV as the particle size increases from 2 to 5.7 nm. The photoconductivity spectra of the nanostructured SnSe thin films of different particle size showed transitions at 2.45, 2.34 and 2.21 eV for films of different particle size.

Keywords

SnSe Memory Switching Photoconductivity Signal SnSe Film Transmission Electron Microscope Diffraction Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  1. 1.Solid State Physics DepartmentNational Research CenterDokki, CairoEgypt

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