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High quality ZnO:Al thin films deposited by using initial sputtering condition

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Abstract

High quality ZnO:Al (AZO) thin films sputtered at room temperature were deposited under a various initial pressures and its properties were investigated. With decreasing initial pressures, the crystallinity and sheet resistance of AZO thin films were improved and decreased, respectively. According to the composition results with the initial pressure, the low initial pressure promoted stoichiometric composition and increased Al composition in AZO thin films, resulting in improvement of crystallinity and increase of carrier concentration. These phenomena were attributed to reduction of residual gases with decreasing initial pressure. All samples exhibited highly transparent over 80 % at visible wavelength range (400–800 nm). In AZO thin films deposited at room temperature, the initial pressure is known to be a critical factor to obtain a high-quality thin film.

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Authors and Affiliations

  1. Advanced Development Group, Samsung Electronics Co. Ltd., Yongin, 446-711, Gyeonggi, Korea

    Deok Kyu Kim

  2. Division of Electronics and Information Engineering, Cheongju University, Cheongju, 360-746, Chungbuk, Korea

    Hong Bae Kim

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  1. Deok Kyu Kim
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  2. Hong Bae Kim
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Correspondence to Deok Kyu Kim.

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Kim, D.K., Kim, H.B. High quality ZnO:Al thin films deposited by using initial sputtering condition. J Mater Sci: Mater Electron 24, 113–117 (2013). https://doi.org/10.1007/s10854-012-0938-8

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  • DOI: https://doi.org/10.1007/s10854-012-0938-8

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