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Microstructure and properties of ZrO2-, TiO2-doped Ca–Si–B based ceramics

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Abstract

The microstructure, sintering and dielectric properties of ZrO2-, TiO2-doped Ca–Si–B based ceramics prepared by solid-phase process were investigated, and the effects of ZrO2, TiO2 content on these performances were analyzed. The Ca–Si–B based ceramics without additive (ZrO2 or TiO2) showed a high sintering temperature (1,100 °C) and had the dielectric properties: dielectric constant (εr) of 8.38, dielectric loss (tanδ) of 1.51 × 10−3 at 1 MHz, and volume density of 2.47 g/cm3. The addition of ZrO2, TiO2 was revealed to lower the sintering temperature of Ca–Si–B based ceramics to 1,000 °C and enhance the sintering and dielectric properties: ρ = 2.61 g/cm3, εr = 5.85, tanδ = 1.59 × 10−4 (1 MHz) with ZrO2 addition, and ρ = 2.65 g/cm3, εr = 6.12, tanδ = 6.4 × 10−4 (1 MHz) with TiO2 addition, which are superior to the pure Ca–Si–B. The results show that ZrO2, TiO2 as nucleating agents, are conducive to the precipitation of crystals, thus decrease the sintering temperature and improve the dielectric properties of Ca–Si–B based ceramics.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China under Grant nos 60721001, 51132003 and 61171047.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Ming He, Huaiwu Zhang & Shuren Zhang

  2. Department of Communication Engineering, Chengdu Electromechanical College, Chengdu, 610031, China

    Ming He

  3. College of Chemistry and Environment Protection Environment, Southwest University for Nationalities, Chengdu, 610041, China

    Jing Wan

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  1. Ming He
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  2. Huaiwu Zhang
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Correspondence to Ming He.

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He, M., Zhang, H., Zhang, S. et al. Microstructure and properties of ZrO2-, TiO2-doped Ca–Si–B based ceramics. J Mater Sci: Mater Electron 23, 1734–1738 (2012). https://doi.org/10.1007/s10854-012-0655-3

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  • DOI: https://doi.org/10.1007/s10854-012-0655-3

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