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Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

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Abstract

The compositionally graded Bi4−xNdxTi3O12 (BNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by sol–gel method. Their microstructure, ferroelectric and dielectric properties were investigated. The single-phase upgraded and downgraded BNT films were obtained with (117) preferred orientation. Compared to the homogeneous BNT films prepared by the same conditions, the remanent polarization (P r) and permittivity (ε r) of compositionally graded BNT films were significantly enhanced. The upgraded BNT film showed larger 2P r (34.9 μC/cm2) and ε r (509), and those of downgraded BNT film were 29.4 μC/cm2 and 505. Bi element in the downgraded BNT film accumulated near the interface of film/Pt bottom electrode, which deteriorated the compositional gradient and resulted in decreasing 2P r and ε r compared to the upgraded BNT film.

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Acknowledgments

This work was financed by the International Science and Technology Cooperation Program of China (Grant no. 2009DFB50470), New Century Excellent Talents in University of China (Grant no. NCET-10-0662) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant no. 50902108).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China

    Changyong Liu, Yiping Gong, Dongyun Guo, Chuanbin Wang, Qiang Shen & Lianmeng Zhang

  2. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China

    Changyong Liu, Yiping Gong, Dongyun Guo, Chuanbin Wang, Qiang Shen & Lianmeng Zhang

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  1. Changyong Liu
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  2. Yiping Gong
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  3. Dongyun Guo
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Correspondence to Dongyun Guo.

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Liu, C., Gong, Y., Guo, D. et al. Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method. J Mater Sci: Mater Electron 23, 1711–1714 (2012). https://doi.org/10.1007/s10854-012-0651-7

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  • DOI: https://doi.org/10.1007/s10854-012-0651-7

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