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Enhanced hydrophilicity of the Si substrate for deposition of VO2 film by sol–gel method

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Abstract

We have illustrated the role of hydrophilic nature of Si substrate played in the improvement of the contact performance between the vanadium dioxide (VO2) film and Si substrate. The VO2 films were fabricated by sol–gel method on single crystal Si substrate, which was pre-treated with hydrophilic solution and obtained a quite improved hydrophilicity. The bonding of Si substrate with precursor V2O5 gel was interpreted. The morphology and crystalline structure of the films were investigated by field-emission scanning electron microscopy, atomic force microscopy and X-ray diffraction. It is shown that the surface of the film on Si substrate with enhanced hydrophilicity is quite homogeneous and uniform. The film exhibits the formation of VO2 phase with (011) preferred orientation. Moreover, the optical pump induced phase transition property of the film was studied by terahertz time-domain spectroscopy, which revealed around 70% reduction of transmission at 0.1–1.5 THz in the VO2 film across the phase transition.

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Acknowledgments

This work was financial supported by the National Natural Science Foundation of China (Grant Nos. 61072036 and 61001031), and the National Key Program of Fundamental Research of China (Grant Nos. 2007CB310401). The authors thank Analytical and Testing Center of Sichuan University for their XRD analysis.

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Authors and Affiliations

  1. College of Materials Science and Engineering, Sichuan University, Chengdu, 610064, Sichuan, People’s Republic of China

    Qiwu Shi, Wanxia Huang, Jing Wu, Dong Zhao & Jiazhen Yan

  2. Terahertz Science and Technology Research Center, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, People’s Republic of China

    Yaxin Zhang & Shen Qiao

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  1. Qiwu Shi
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  2. Wanxia Huang
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  6. Dong Zhao
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Correspondence to Wanxia Huang.

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Shi, Q., Huang, W., Zhang, Y. et al. Enhanced hydrophilicity of the Si substrate for deposition of VO2 film by sol–gel method. J Mater Sci: Mater Electron 23, 1610–1615 (2012). https://doi.org/10.1007/s10854-012-0637-5

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