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Preparation and properties of Mg0.2Zn0.8O:Al UV transparent conducting thin films deposited by RF magnetron sputtering at room temperature with rapid annealing

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Abstract

Mg0.2Zn0.8O:Al UV transparent conducting thin films were deposited by RF magnetron sputtering at room temperature with a rapid annealing process. Effects of sputtering power, argon gas pressure and annealing temperature on structure, optical and electrical properties of Mg0.2Zn0.8O:Al films were investigated. The experimental results show that Mg0.2Zn0.8O:Al thin films exhibit high preferred c-axis-orientation. The sputtering power, argon gas pressure and annealing temperature all exert a strong influence on the electrical resistivity of Mg0.2Zn0.8O:Al thin films due to the variation of carrier concentration and mobility in films derived from the change of effective doping and crystallinity. The lowest electrical resistivity of Mg0.2Zn0.8O:Al thin films is 3.5 × 10−3 Ω·cm when the sputtering power is 200 W, the argon gas pressure is 2.0 Pa and the annealing temperature is above 500 °C. The transparent spectrum range of Mg0.2Zn0.8O:Al thin films extend to ultraviolet band and the optical transmittance is between 80 and 90%, but the sputtering power, argon gas pressure and annealing temperature all exert little influence on optical transmittance.

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Acknowledgments

This work was supported by the Research funds of Guangxi Key Laboratory of Information Materials (No. 0710908-05-Z) and Guangxi Specific Project Construction of Infrastructure Platform for Science and Technology (No. 10-046-13).

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Authors and Affiliations

  1. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, China

    Hua Wang, Zhu Huang, Ji-wen Xu, Ling Yang & Shang-ju Zhou

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  1. Hua Wang
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  2. Zhu Huang
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  3. Ji-wen Xu
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  4. Ling Yang
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  5. Shang-ju Zhou
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Correspondence to Hua Wang.

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Wang, H., Huang, Z., Xu, Jw. et al. Preparation and properties of Mg0.2Zn0.8O:Al UV transparent conducting thin films deposited by RF magnetron sputtering at room temperature with rapid annealing. J Mater Sci: Mater Electron 23, 403–407 (2012). https://doi.org/10.1007/s10854-011-0465-z

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  • DOI: https://doi.org/10.1007/s10854-011-0465-z

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