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Thickness and mosaic morphology of InAs films grown by LPE supercooling technique

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Abstract

InAs films with different thicknesses were fabricated on (100)-oriented InAs substrate by liquid phase epitaxy supercooling technique using the sliding graphite boat. The X-ray diffraction measurement shows that films exhibit (100)-preferred crystal orientation. The film thickness dependence on the growth time and cooling rate was investigated by scanning electron microscope and the growth kinetics was analyzed based on one-dimensional diffusion theory. The experimental data were fitted very well by the supercooling equation, and the fitted diffusion coefficient at 520 °C was 6.2 × 10−5 cm2/s. The newly observed mosaic morphology was probably caused by the shake of the growth solution due to sliding the graphite boat.

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Acknowledgments

This research was supported financially by China National 973 Project (2010CB933700), NSFC (10804117 and 60221502), NSF of Shanghai (08ZR1421900), and Knowledge Innovation Project in Chinese Academy of Sciences.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China

    H. Y. Deng, Q. W. Wang, J. Wu, S. H. Hu, X. Chen & N. Dai

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  1. H. Y. Deng
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  2. Q. W. Wang
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  3. J. Wu
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  4. S. H. Hu
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  5. X. Chen
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Correspondence to H. Y. Deng.

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Deng, H.Y., Wang, Q.W., Wu, J. et al. Thickness and mosaic morphology of InAs films grown by LPE supercooling technique. J Mater Sci: Mater Electron 22, 811–814 (2011). https://doi.org/10.1007/s10854-010-0216-6

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  • DOI: https://doi.org/10.1007/s10854-010-0216-6

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