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Fabrication of thin films by sputtering deposition using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic as target

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Abstract

Dielectric ceramic thin films were fabricated on SiO2 (110) substrates by the radio frequency (RF) magnetron sputtering method using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramic as target. The microstructure, components, and morphology of the thin films were investigated thoroughly. The results reveal that the experimental conditions can affect the growth of the thin films significantly. The main phases of the thin films are Ba0.5Sr0.5Nb2O6 and Ba0.27Sr0.75Nb2O5.78, which are of different composition from that of the ceramic target due to Zn loss. The thin films are polycrystalline with high-quality crystalline and are made up of dense rod-like structures. The growth mechanism of the thin films is discussed in particular.

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Acknowledgments

The author thank Mr. Chuanwen Cui, Prof. Shuyun Wang, and Prof.Yuguo Li for their contributions to this article.

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  1. College of Physics & Electronics, Shandong Normal University, 250014, Jinan, People’s Republic of China

    Feng Shi

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  1. Feng Shi
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Correspondence to Feng Shi.

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Shi, F. Fabrication of thin films by sputtering deposition using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic as target. J Mater Sci: Mater Electron 22, 771–775 (2011). https://doi.org/10.1007/s10854-010-0209-5

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  • DOI: https://doi.org/10.1007/s10854-010-0209-5

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