Fabrication of thin films by sputtering deposition using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic as target
Dielectric ceramic thin films were fabricated on SiO2 (110) substrates by the radio frequency (RF) magnetron sputtering method using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramic as target. The microstructure, components, and morphology of the thin films were investigated thoroughly. The results reveal that the experimental conditions can affect the growth of the thin films significantly. The main phases of the thin films are Ba0.5Sr0.5Nb2O6 and Ba0.27Sr0.75Nb2O5.78, which are of different composition from that of the ceramic target due to Zn loss. The thin films are polycrystalline with high-quality crystalline and are made up of dense rod-like structures. The growth mechanism of the thin films is discussed in particular.
KeywordsNb2O5 Crystalline Quality Radio Frequency Magnetron Transportation Capacity Ceramic Thin Film
The author thank Mr. Chuanwen Cui, Prof. Shuyun Wang, and Prof.Yuguo Li for their contributions to this article.
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