Skip to main content
Log in

Synthesis, characterization and growth mechanism of ZnO nanowires on NiCl2-coated Si substrates

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Well-crystallized ZnO nanowires have been successfully synthesized on NiCl2-coated Si substrates via a carbon thermal reduction deposition process. The pre-deposited Ni nanoparticles by dipping the substrates into NiCl2 solution can promote the formation of ZnO nuclei. The as-synthesized nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum. The results demonstrate that the as-fabricated nanowires with about 60 nm in diameter and several tens of micrometers in length are preferentially arranged along [0001] direction with (0002) as the dominate surface. Room temperature PL spectrum illustrates that the ZnO nanowires exist a UV emission peak and a green emission peak, and the peak centers locate at 387 and 510 nm. Finally, the growth mechanism of the nanowires is briefly discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. R.H. Baughman, A.A. Zakhidov, W.A. Hee, Science 297, 787 (2002)

    Article  CAS  Google Scholar 

  2. J.S. Wang, K.M. Lakin, Appl. Phys. Lett. 42, 352–354 (1983)

    Article  CAS  Google Scholar 

  3. X.D. Wang, C.J. Summers, Z.L. Wang, Nano Lett. 4, 423 (2004)

    Article  CAS  Google Scholar 

  4. S.B. Qadri, H. Kim, J.S. Horwitz, D.B. Chrisey, J. Appl. Phys. 88, 6564 (2000)

    Article  CAS  Google Scholar 

  5. L. Vayssieres, K. Keis, A. Hagfeldt, S.E. Lindquist, Chem. Mater. 13, 4395–4398 (2001)

    Article  CAS  Google Scholar 

  6. A. Umar, S. Lee, Y.H. Im, Y.B. Hahn, Nanotechnology 16, 2462–2468 (2005)

    Article  CAS  Google Scholar 

  7. H.W. Kim, N.H. Kim, J.H. Shim, N.H. Cho, C. Lee, J.Mater Sci: Mater Electron. 16, 13–15 (2005)

    Article  CAS  Google Scholar 

  8. J. Grabowska, K.K. Nanda, E. Mcglynn, J.P. Mosnier, M.O. Henry, A. Beaucamp, A. Meaney, J. Mater. Sci.: Mater Electron. 16, 397–401 (2005)

    Article  CAS  Google Scholar 

  9. J.S. Jie, G.Z. Wang, Q.T. Wang, Y.M. Chen, X.H. Han, X.P. Wang et al., J. Phys. Chem. B 108, 11976–11980 (2004)

    Article  CAS  Google Scholar 

  10. H.M. Zhang, Y.J. Li, G.F. Hu, B. Gao, Y.J. Zhu, J Mater Sci: Mater Electron (2009) doi: 10.1007/s10854-009-0040-z

  11. C.X. Xu, X.W. Sun, B.J. Chen, Z.L. Dong, M.B. Yu, X.H. Zhang, S.J. Chua, Nanotechnology 16, 70–73 (2005)

    Article  CAS  Google Scholar 

  12. K. Yu, Q.X. Zhang, J. Wu, L.J. Li, Y. Xu, S.H. Huang, Z.Q. Zhu, Nano. Res. 1, 221–228 (2008)

    Article  CAS  Google Scholar 

  13. P.X. Gao, Z.L. Wang, J.phys. chem. B 106, 12653–12658 (2002)

    Article  CAS  Google Scholar 

  14. X.L. Chen, J.Y. Li, Y.G. Cao et al., Adv. Mater. 12, 1432–1436 (2000)

    Article  CAS  Google Scholar 

  15. J.M. Bonard, N. Weiss, H. Kind, T. Stockli, L. Forro, K. Kern, A. Chatelain, Adv. Mater. 13, 184 (2001)

    Article  CAS  Google Scholar 

  16. S.C. Lyu, O.H. Cha, E.K. Suh, H. Ruh, H.J. Lee, C.J. Lee, Chem. Phys. Lett. 367, 136 (2003)

    Article  CAS  Google Scholar 

  17. B. Zhang, S.M. Zhou, B. Liu, H.C. Gong, X.T. Zhang, Sci. China Ser. E-Tech. 52, 883–887 (2009)

    Article  CAS  Google Scholar 

  18. T.Y. Kim, S.H. Lee, Y.H. Mo, K.S. Nahm, J.Y. Kim, E.K. Suh, M. Kim, Korean J. Chem. Eng. 21, 733 (2004)

    Article  CAS  Google Scholar 

  19. W.D. Yu, X.M. Li, X.D. Gao, J. Cryst. Growth 270, 92 (2004)

    Article  CAS  Google Scholar 

  20. H.W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh, C.C. Tin, M.J. Bozack, J.R. Williams, M. Park, Mater. Res. Soc. Symp. Proc. 829, B2.26 (2005)

    Article  Google Scholar 

  21. D. Wang, Optical spectroscopy of Wide-band-gap Semiconductors: Raman and photoluminescence of gallium nitride, Zinc oxide and their nanostructures (Auburn University, Auburn, 2006), pp. 1–150

    Google Scholar 

  22. A.J. Cheng, One dimensional zinc oxide nanostructures for optoelectronic applications: solar cells and photodiodes (Auburn University, Auburn, 2008), pp. 1–198

    Google Scholar 

  23. S.K. Panda, N. Singh, S. Pal, C. Jacob, J. Mater. Sci.: Mater Electron. 20, 771–775 (2009)

    Article  CAS  Google Scholar 

  24. K. Vanheusden, W.L. Warren, C.H. Seager, J. Appl. Phys. 79, 7983 (1996)

    Article  CAS  Google Scholar 

  25. H.Y. Lu, S.Y. Chu, S.H. Cheng, J. Cryst. Growth 274, 506–511 (2005)

    Article  CAS  Google Scholar 

  26. D.M. Bagnall, Y.F. Chen, M.Y. Shen, Z. Zhu, T. Yao, J. Cryst. Growth 185, 605–609 (1998)

    Google Scholar 

  27. B.D. Yao, Y.F. Chan, N. Wang, Appl. Phys. Lett. 81, 757–759 (2002)

    Article  CAS  Google Scholar 

  28. L.B. Feng, A.H. Liu, M. Liu, Y.Y. Ma, J. Wei, B.Y. Man, Mater. Charact. 61, 128 (2010)

    Article  CAS  Google Scholar 

  29. M.K. Li, D.Z. Wang, F. Shi, F. Ding, H. Jin, Chin. Phys. Lett. 24, 236–239 (2007)

    Article  Google Scholar 

  30. Y.W. Heo, V. Varadarajan, M. Kaufman, K. Kim, D.P. Norton, F. Ren, Appl. Phys. Lett. 81, 3046–3048 (2002)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This project was supported by the Key Research Program of the National Natural Science Foundation of China (No. 90301002).

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Huizhao Zhuang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhuang, H., Wang, J., Li, J. et al. Synthesis, characterization and growth mechanism of ZnO nanowires on NiCl2-coated Si substrates. J Mater Sci: Mater Electron 22, 765–770 (2011). https://doi.org/10.1007/s10854-010-0208-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-010-0208-6

Keywords

Navigation