Electrical properties of the CdS/InP solar cell for photovoltaic applications
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n-CdS/p-InP solar cells have been prepared by deposition of n-CdS thin films using thermal evaporation technique onto p-type InP <100>. The I–V characteristics of the CdS/InP heterojunctions in dark condition were studied in the 298–350 K temperatures range for charge transport mechanism investigation. It has been established that in the entire temperatures range, the charge transport mechanism is determined by recombination processes in the depletion region. The CdS/InP heterojunction solar cells obtained using this technique and characterized under illumination condition have showed a conversion efficiency of 11% at Isc = 10 mA/cm2, Voc = 0.7 V.
KeywordsVersus Characteristic Heterojunction Solar Cell Direct Bandgap Indium Phosphide AuZn
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