Abstract
Indium tin oxide (ITO) films deposited by DC magnetron sputtering were annealed under CdCl2 atmosphere at different temperatures. The effects of CdCl2 heat-treatment on the structural, electrical and optical properties of the films were investigated. The X-ray diffraction measurement proves the annealing results in a change of preferred orientation from (400) to (222). It is found the resistivity increases from 1.49 × 10−4 Ω cm of the as-deposited film to 6.82 × 10−4 Ω cm of the film annealed at 420 °C. The optical energy gap for the film varies from 3.97 to 3.89 eV. It is also found that the CdCl2 heat-treatment results in narrowing the energy gap of ITO film.
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The authors gratefully acknowledge the Chinese Ministry of Science and Technology for financial support under construct 2003AA513010.
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Wang, S., Zhang, J., Wang, B. et al. The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering. J Mater Sci: Mater Electron 21, 441–444 (2010). https://doi.org/10.1007/s10854-009-9932-1
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DOI: https://doi.org/10.1007/s10854-009-9932-1