The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering
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Indium tin oxide (ITO) films deposited by DC magnetron sputtering were annealed under CdCl2 atmosphere at different temperatures. The effects of CdCl2 heat-treatment on the structural, electrical and optical properties of the films were investigated. The X-ray diffraction measurement proves the annealing results in a change of preferred orientation from (400) to (222). It is found the resistivity increases from 1.49 × 10−4 Ω cm of the as-deposited film to 6.82 × 10−4 Ω cm of the film annealed at 420 °C. The optical energy gap for the film varies from 3.97 to 3.89 eV. It is also found that the CdCl2 heat-treatment results in narrowing the energy gap of ITO film.
KeywordsCarrier Concentration In2O3 Hall Mobility Thin Film Solar Cell CdTe Thin Film
The authors gratefully acknowledge the Chinese Ministry of Science and Technology for financial support under construct 2003AA513010.