Sol–gel ZnO in organic transistor-based non-volatile memory

  • Tianyi Wu
  • Kean C. Aw
  • Noviana Tjitra Salim
  • Wei Gao


There are many types of non-volatile memory devices but they are generally constructed from silicon. With the development of transparent organic thin film transistors, there is a need to also develop memory devices to allow the complete integration of digital circuitries. The aim of this research is to develop a fabrication route of an all-solution processing of optically transparent organic field effect transistor-based non-volatile memory (OFET-NVM). The OFET-NVMs can be programmed and erased at a relatively low voltage (±15 V). The OFET-NVM has a charge mobility of 0.125 cm2/V-s, threshold voltage shift of approximately 3 V between programmed and erased transistor and a sub-threshold slope of 1.5 V/decade. Although these figure-of-merits are not comparable to its silicon counterpart, the creation of an all solution processed OFET-NVM that is optically transparent (~70–85%) has been demonstrated.


Pentacene Solid State Drive Organic Thin Film Transistor Floating Gate Inversion Mode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Tianyi Wu
    • 1
  • Kean C. Aw
    • 1
  • Noviana Tjitra Salim
    • 2
  • Wei Gao
    • 2
  1. 1.Mechanical EngineeringThe University of AucklandAucklandNew Zealand
  2. 2.Chemical and Materials EngineeringThe University of AucklandAucklandNew Zealand

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