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Sol–gel ZnO in organic transistor-based non-volatile memory

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Abstract

There are many types of non-volatile memory devices but they are generally constructed from silicon. With the development of transparent organic thin film transistors, there is a need to also develop memory devices to allow the complete integration of digital circuitries. The aim of this research is to develop a fabrication route of an all-solution processing of optically transparent organic field effect transistor-based non-volatile memory (OFET-NVM). The OFET-NVMs can be programmed and erased at a relatively low voltage (±15 V). The OFET-NVM has a charge mobility of 0.125 cm2/V-s, threshold voltage shift of approximately 3 V between programmed and erased transistor and a sub-threshold slope of 1.5 V/decade. Although these figure-of-merits are not comparable to its silicon counterpart, the creation of an all solution processed OFET-NVM that is optically transparent (~70–85%) has been demonstrated.

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References

  1. P. Pavan, R. Bez, P. Olivo, E. Zanoni, in Proceedings of the IEEE, vol. 85 (1997), pp. 1248–1271

  2. A. Sawa, Mater. Today. 11(6), 28–36 (2008). doi:10.1016/S1369-7021(08)70119-6

    Article  CAS  Google Scholar 

  3. W. Welnic, M. Wuttig, Mater. Today. 11(6), 20–27 (2008). doi:10.1016/S1369-7021(08)70118-4

    Article  CAS  Google Scholar 

  4. J. Jo, T.-M. Lee, J.-S. Yu, C.-H. Kim, D.-S. Kim, E.-S. Lee, M. Esashi, Sens. Mater. 19, 487–496 (2007)

    CAS  Google Scholar 

  5. C.D. Dimitrakopoulos, D.J. Mascaro, IBM J. Res. Develop. 45, 11–27 (2001)

    Article  CAS  Google Scholar 

  6. P. Liu, Y. Wu, Y. Li, B.S. Ong, S. Zhu, J. Am. Chem. Soc. 128, 4554–4555 (2006). doi:10.1021/ja060620l

    Article  CAS  PubMed  Google Scholar 

  7. T.P. Alexander, T.J. Bukowski, G. Teowee, D.R. Uhlmann, K.C. McCarthy, J. Dawley, B.J.J. Zelinski, in Proceedings of the IEEE International Symposium on Applications of Ferroelectrics, vol. 2 (1996), pp. 585–588

  8. Q. Yu, H. Yang, W. Fu, L. Chang, J. Xu, C. Yu, R. Wei, K. Du, H. Zhu, M. Li, G. Zou, Thin. Solid. Films. 515, 3840–3843 (2007). doi:10.1016/j.tsf.2006.10.077

    Article  CAS  ADS  Google Scholar 

  9. G. He, J.H, Cai, G, Ni, Mater. Chem. Phys. 110, 110–114 (2008). doi:10.1016/j.matchemphys.2008.01.023

    Article  CAS  Google Scholar 

  10. A. Afzali, C.D. Dimitrakopoulos, T.L. Breen, J. Am. Chem. Soc. 124, 8812–8813 (2002). doi:10.1021/ja0266621

    Article  CAS  PubMed  Google Scholar 

  11. K.D. Schroder, Advanced MOS devices. (Addison-Wesley, 1987)

  12. E. Orgiua, I. Manunzaa, M. Sannaa, P. Cosseddua, A. Bonfiglioa, Thin. Solid. Films. 516, 1533–1573 (2008). doi:10.1016/j.tsf.2007.03.157

    Article  ADS  CAS  Google Scholar 

  13. X.-H. Zhang, S.M. Lee, B. Domercq, B. Kippelen, Appl. Phys. Lett. 92, 243307 (2008). doi:10.1063/1.2940232

    Article  ADS  CAS  Google Scholar 

  14. T. Cahyahi, J.N. Tey, S.G. Mhaisalkar, F. Boey, V.R. Rao, R. Lal, Z.H. Huang, G.J. Qi, Z.-K. Chen, C.M. Ng, Appl. Phys. Lett. 90, 122112 (2007). doi:10.1063/1.2715030

    Article  ADS  CAS  Google Scholar 

  15. S.K. Park, T.N. Jackson, J.E. Anthony, D.A. Mourey, Appl. Phys. Lett. 91, 063514 (2007). doi:10.1063/1.2768934

    Article  ADS  CAS  Google Scholar 

  16. A. Facchetti, J. Sanghyun, D. Janes, B. Jones, M. Wasielewski, T.J. Marks, Proceeding of Flexible Electronics and Displays Conference and Exhibition, (2008) pp. 1–7

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Authors and Affiliations

  1. Mechanical Engineering, The University of Auckland, Auckland, New Zealand

    Tianyi Wu & Kean C. Aw

  2. Chemical and Materials Engineering, The University of Auckland, Auckland, New Zealand

    Noviana Tjitra Salim & Wei Gao

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  1. Tianyi Wu
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  2. Kean C. Aw
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  3. Noviana Tjitra Salim
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  4. Wei Gao
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Correspondence to Kean C. Aw.

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Wu, T., Aw, K.C., Tjitra Salim, N. et al. Sol–gel ZnO in organic transistor-based non-volatile memory. J Mater Sci: Mater Electron 21, 125–129 (2010). https://doi.org/10.1007/s10854-009-9879-2

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  • DOI: https://doi.org/10.1007/s10854-009-9879-2

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