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n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates

  • Mi Kyung Choi
  • Won Suk Han
  • Young Yi Kim
  • Bo Hyun Kong
  • Hyung Koun Cho
  • Jae Hyun Kim
  • Hong-Seok Seo
  • Kang-Pil Kim
  • Jung-Ho Lee
Article

Abstract

n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting.

Keywords

Electrochemical Etching Metal Insulator Semiconductor Deep Level Emission Metal Insulator Semiconductor Structure Increase Interface Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

This work at SKKU was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-521-D00191) and by the Ministry of Knowledge Economy (MKE) and Korea Industrial Technology Foundation (KOTEF) through the Human Resource Training Project for Strategic Technology. This work at DGIST was supported by Korea Ministry of Education, Science and Technology (MEST) basic research fund.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Mi Kyung Choi
    • 1
  • Won Suk Han
    • 1
  • Young Yi Kim
    • 1
  • Bo Hyun Kong
    • 1
  • Hyung Koun Cho
    • 1
  • Jae Hyun Kim
    • 2
  • Hong-Seok Seo
    • 2
  • Kang-Pil Kim
    • 2
  • Jung-Ho Lee
    • 3
  1. 1.School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwonKorea
  2. 2.Department of Nano & Bio TechnologyDaegu-Gyeongbuk Institute of Science and Technology (DGIST)DaeguKorea
  3. 3.Department of Chemical EngineeringHanyang UniversityAnsanKorea

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