Effect of seed layer on the ferroelectric properties and leakage current characteristics of sol–gel derived vanadium doped PbZr0.53Ti0.47O3 films

  • S. E. Valavan


In this paper, we report the ferroelectric properties and leakage current characteristics of vanadium-doped PbZr0.53Ti0.47O3 (PZTV) films grown on various seed layers prepared by a sol–gel process. The PZTV multilayered film of ~250-nm-thick showed excellent ferroelectric properties, with a large remnant polarization (P r) of ~30 μC/cm2 (E c ~ 90 kV/cm), a high saturation polarization (P s) of ~85 μC/cm2 for an applied field of 1,000 kV/cm, fatigue-free characteristics of up to ≥ 1010 switching cycles, and a low leakage current density of 7 × 10−8 A/cm2 at 100 kV/cm. X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) investigations indicated that PZTV films grown on PbZr0.53Ti0.47O3/PbLa0.05TiO3 (PZT/PLT) seed layers exhibited a dense, well-crystallized microstructure with random orientations and a rather smooth surface morphology.


Seed Layer Ferroelectric Property Leakage Current Density Morphotropic Phase Boundary Remnant Polarization 
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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.New Materials Technology Development CentreSchool of Applied Science, Republic PolytechnicSingaporeSingapore

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