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SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing

  • E. B. Yakimov
  • V. V. Privezentsev
Article

Abstract

The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the electron beam perpendicularly to the Schottky barrier playing a role of collector. The minority carrier diffusion length L and the depletion region width W were obtained by fitting the experimental dependence of collected current on beam energy. Some extended defects were revealed, which were associated with zinc precipitates and/or dislocations.

Keywords

Schottky Barrier Minority Carrier Electron Beam Induce Current Focus Electron Beam Minority Carrier Diffusion Length 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Institute of Microelectronics Technology & High Purity MaterialsRussian Academy of SciencesChernogolovkaRussia
  2. 2.Institute of Physics & TechnologyRussian Academy of SciencesMoscowRussia

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