SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
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The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the electron beam perpendicularly to the Schottky barrier playing a role of collector. The minority carrier diffusion length L and the depletion region width W were obtained by fitting the experimental dependence of collected current on beam energy. Some extended defects were revealed, which were associated with zinc precipitates and/or dislocations.
KeywordsSchottky Barrier Minority Carrier Electron Beam Induce Current Focus Electron Beam Minority Carrier Diffusion Length
- 2.S.N. Dobryakov, B.V. Kornilov, V.V. Privezentsev, Russ. Microelectron. 34, 385 (2005)Google Scholar