SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing

  • E. B. Yakimov
  • V. V. Privezentsev


The properties of n-type silicon doped with phosphorus and compensated by zinc during high temperature diffusion annealing with the subsequent quenching were investigated by the electron beam induced current method in a scanning electron microscope. The investigations were carried out with the electron beam perpendicularly to the Schottky barrier playing a role of collector. The minority carrier diffusion length L and the depletion region width W were obtained by fitting the experimental dependence of collected current on beam energy. Some extended defects were revealed, which were associated with zinc precipitates and/or dislocations.


Schottky Barrier Minority Carrier Electron Beam Induce Current Focus Electron Beam Minority Carrier Diffusion Length 
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  1. 1.
    H. Schroth, K. Laßmann, S. Voß, H. Bracht, Phys. Rev. Lett. 85, 417 (2000). doi: 10.1103/PhysRevLett.85.417 CrossRefGoogle Scholar
  2. 2.
    S.N. Dobryakov, B.V. Kornilov, V.V. Privezentsev, Russ. Microelectron. 34, 385 (2005)Google Scholar
  3. 3.
    N. Sclar, Solid. State. Electron. 24, 203 (1981). doi: 10.1016/0038-1101(81) 90083-6 CrossRefGoogle Scholar
  4. 4.
    H. Willebrand, Y.U. Astrov, L. Portsel, S. Teperick, T. Gauselmann, Infrared. Phys. Technol. 36, 809 (1995). doi: 10.1016/1350-4495(95) 00004-I CrossRefGoogle Scholar
  5. 5.
    A.M. Stoneham, A.J. Fisher, P.T. Greenland, J. Phys. Condens. Matter 15, L447 (2003). doi: 10.1088/0953-8984/15/27/102 CrossRefGoogle Scholar
  6. 6.
    E.B. Yakimov, S.S. Borisov, S.I. Zaitsev, Semiconductors 41, 411 (2007). doi: 10.1134/S1063782607040094 CrossRefGoogle Scholar
  7. 7.
    H.J. Leamy, J. Appl. Phys. 53, R51 (1982). doi: 10.1063/1.331667 CrossRefGoogle Scholar
  8. 8.
    C.J. Wu, D.B. Wittry, J. Appl. Phys. 49, 2827 (1978). doi: 10.1063/1.325163 CrossRefGoogle Scholar
  9. 9.
    C. Donolato, Appl. Phys. Lett. 46, 270 (1985). doi: 10.1063/1.95654 CrossRefGoogle Scholar
  10. 10.
    H.-J. Fitting, H. Glaefeke, W. Wild, Phys. Stat. Sol. A 43, 185 (1977). doi: 10.1002/pssa.2210430119 CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Institute of Microelectronics Technology & High Purity MaterialsRussian Academy of SciencesChernogolovkaRussia
  2. 2.Institute of Physics & TechnologyRussian Academy of SciencesMoscowRussia

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