SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
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The Mg doping profiles in close proximity to the (AlGaIn)N/GaN QW active region of group III-nitride light-emitting diodes grown by low pressure metal-organic vapor-phase epitaxy on sapphire substrates were investigated by secondary ion mass spectrometry (SIMS) depth profiling. The actual Mg profiles close to the active region have been found to be influenced by segregation as well as by back-diffusion during growth and can be controlled by appropriate growth temperatures. From the Mg depth profiles we estimated an activation energy of 4.5−4.7 eV for Mg diffusion in (AlGa)N.
KeywordsQuantum Well Lead Structure Doping Profile Electron Barrier Quantum Well Region
The authors would like to thank J. Wiegert for the MOVPE layer growth, T. Fuchs and M. Grimm for expert assistance in the SIMS analysis, S. Liu for performing the EL measurements and R. Schmidt for LED preparation. We thank G. Weimann and M. Walther for encouragement and continuous support. This work was supported by OSRAM Opto Semiconductors and the Federal Ministry of Education and Research (BMBF).
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