Dislocation-related photoluminescence from processed Si
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Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of related defects, e.g., dislocations. Depending on processing conditions, the dislocation-related PL lines at about 0.81 and 0.87 eV are of the highest intensity while PL peaks also at 0.84 and 0.94 eV. The subsequent treatments of processed Cz-Si under pulse HP up to 2 GPa at room temperature affect PL intensity, also because of annihilation of non-radiative recombination centers formed at HT–(HP). Specific HT–HP treatments, influencing a creation of oxygen precipitates and a creation/annihilation of non-radiative recombination centers, make possible to tailor PL from Cz-Si.
KeywordsOxygen Precipitate Direct Wafer Bonding Czochralski Grown Silicon Specific High Temperature
The authors are grateful to Dr. T. M. Burbaev and Dr. V. V. Kurbatov from the Physical Institute, RAS, Moscow, Russia and to M. Sc. B. Surma from the Institute of Electronic Materials Technology, Warsaw, Poland for some experimental data.
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