Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions



The structural quality of GaN overgrown layers was evaluated using Transmission Electron Microscopy methods. Growth on polar and non-polar substrates was compared. Independent from growth polarity much better structural quality of the overgrown areas compared to the seed areas was obtained, but overgrowth on non-polar substrates is more difficult. For the latest samples, two wings on the opposite sites of the seed area grow in two different polar directions with different growth rates. Wings grown with Ga polarity are much wider than wings grown with N-polarity making coalescence of these layers difficult. Defects formed in the overgrown wings were characterized and their density was compared. It is shown that two-step growth (using two different temperatures) lead to much smaller misorientation between the wings than one step growth


Laterally Epitaxial Overgrowth Kikuchi Line Seed Area Frank Partial Dislocation Opposite Polar Direction 
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This work was supported by the Air Force Office of Scientific Research under Order No. AFOSR-ISSA-06NE- 0011 obtained through the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The use of the facilities at the National Center for Electron microscopy at Lawrence Berkeley National Laboratory is greatly appreciated.


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© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Lawrence Berkeley National LaboratoryBerkeleyUSA
  2. 2.Department of Electrical EngineeringVirginia Commonwealth UniversityRichmondUSA

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