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CMOS photodetector systems for low-level light applications

  • Naser Faramarzpour
  • Munir M. El-Desouki
  • M. Jamal Deen
  • Shahram Shirani
  • Qiyin Fang
Article

Abstract

In this work, we have designed, fabricated and measured the performance of three different active pixel sensor (APS) structures. These APS structures are studied in the context of applications that require low-level light detection systems. The three APS structures studied were—a conventional APS, an APS with a comparator, and an APS with an integrator. A special focus of our study was on both the signal and noise characteristics of each APS structure so the key performance metric of signal-to-noise ratio can be computed and compared. The pixel structures that are introduced in this work can cover a wide range of applications, such as high resolution digital photography using the APS with a comparator, to ultra-sensitive biomedical measurements using the APS with an integrator.

Keywords

Sense Node Dark Current Shot Noise CMOS Technology CMOS Image Sensor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors are grateful to the Natural Sciences and Engineering Research Council (NSERC) of Canada, the Canada Research Chair program and KACST of Saudi Arabia for partially funding this research work.

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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Naser Faramarzpour
    • 1
  • Munir M. El-Desouki
    • 1
  • M. Jamal Deen
    • 1
  • Shahram Shirani
    • 1
  • Qiyin Fang
    • 2
  1. 1.Department of Electrical and Computer Engineering (CRL 226)McMaster UniversityHamiltonCanada
  2. 2.Department of Engineering PhysicsMcMaster UniversityHamiltonCanada

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