Optical properties of undoped and oxygen doped CuCl films on silicon substrates
Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III-Nitrides. However, a large lattice constant difference between the III-Nitride layers and the compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ-CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited undoped and oxygen doped CuCl films on Si are studied using temperature dependent photoluminescence spectroscopy. Oxygen doping degrades the optical quality and introduces an intermediate state leading to negative thermal quenching behaviour.
KeywordsCuCl Free Exciton Exciton Peak Thermal Activation Energy Epitaxial Lateral Overgrowth
This research is supported by Science Foundation Ireland Grant No. RFP/ENE027.
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