IZO/Al/GZO multilayer films to replace ITO films
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Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10−4 Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.
KeywordsBuffer Layer In2O3 Multilayer Film Transparent Conducting Oxide Transparent Conducting Oxide Film
This work was supported by Inha University.
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