IZO/Al/GZO multilayer films to replace ITO films

  • Chongmu Lee
  • R. P. Dwivedi
  • Wangwoo Lee
  • Chanseok Hong
  • Wan In Lee
  • Hyoun Woo Kim


Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10−4 Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.


Buffer Layer In2O3 Multilayer Film Transparent Conducting Oxide Transparent Conducting Oxide Film 
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This work was supported by Inha University.


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Chongmu Lee
    • 1
  • R. P. Dwivedi
    • 1
  • Wangwoo Lee
    • 1
  • Chanseok Hong
    • 1
  • Wan In Lee
    • 2
  • Hyoun Woo Kim
    • 1
  1. 1.Department of Material Science and EngineeringInha UniversityIncheonRepublic of Korea
  2. 2.Department of ChemistryInha UniversityIncheonRepublic of Korea

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