Advertisement

Negative magnetoresistance in SiC heteropolytype junctions

  • Alexander Alexandrovich Lebedev
  • P. L. Abramov
  • N. V. Agrinskaya
  • V. I. Kozub
  • A. N. Kuznetsov
  • S. P. Lebedev
  • G. A. Oganesyan
  • L. M. Sorokin
  • A. V. Chernyaev
  • D. V. Shamshur
Article

Abstract

In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal—insulator transition in 3C–SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C–SiC epitaxial film becomes lower.

Keywords

Epitaxial Layer Twin Boundary Epitaxial Film Insulator Transition Negative Magnetoresistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

The study was supported in part by the Russian Foundation for Basic Research (grant no. 07-02-00919a) and a KWA grant of the Swedish Academy of Sciences.

References

  1. 1.
    A.A. Lebedev, Semicond. Sci. Technol. 21, R17–R34 (2006)CrossRefGoogle Scholar
  2. 2.
    A.A. Lebedev, A.M. Strel’chuk, N.S. Savkina, E.V. Bogdanova, A.S. Tregubova, A.N. Kuznetsov, D.V. Davydov, Mater. Sci. Forum V 433–466, 427–430, (2003)Google Scholar
  3. 3.
    A.A. Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev Абрамов, D.K. Nel’son, B.S. Razbirin, M.P. Scheglov, A.S. Tregubova, M. Suvajarvi, R. Yakimova, Semiconductors 41, 263 (2007)CrossRefGoogle Scholar
  4. 4.
    M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur (ed.), Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (John Wiley & Sons, Inc. 2001)Google Scholar
  5. 5.
    W. Suttrop, G. Pensl, W.J. Choyke, R. Steine, S. Leibenzeder, J. Appl. Phys. 72, 3708 (1992)CrossRefGoogle Scholar
  6. 6.
    H.K. Henisch, R. Roy (eds.), Silicon Carbide-1968, (Pergamon Press, 1969)Google Scholar
  7. 7.
    H. Kuwabara, K. Yamanaka, S. Yamada, Phys. Stat. Solidi A. 37, K157–K161 (1976)CrossRefGoogle Scholar
  8. 8.
    P.J. Dean, W.J. Choyke, L. Patric, J. Lumin. 10, 299–314 (1977)CrossRefGoogle Scholar
  9. 9.
    V.F. Gantmakher “Electrons in disoredered system” Moscow, Fizmatlit, Москва, 2003 (in Russian)Google Scholar
  10. 10.
    J.S. Meyer, A. Atland, B.L. Altshuler, Phys. Rev. Lett. 89(20), 206601 (2002)Google Scholar
  11. 11.
    N.V. Agrinskaya, V.I. Kozub, A.V. Chernyaev, D.V. Shamshur, Phys. Rev. B. 72, 08533 (2005)CrossRefGoogle Scholar
  12. 12.
    A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, Semiconductors 37, 874 (2003)CrossRefGoogle Scholar
  13. 13.
    A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, E.N. Mokhov, Semiconductors 782, 38 (2004)Google Scholar
  14. 14.
    C.Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermuler, R. Helbig, Z.H. Chen, G. Martinez, J. Appl. Phys. 87, 3800 (2000)CrossRefGoogle Scholar
  15. 15.
    Ya.A. Alekseev, O.V. Frank-Kamenetskii, Krystallografiya, (in Russian) 32(4), 1060 (1987)Google Scholar
  16. 16.
    H. Iwata, U. Lindfelt, S. Oberg, P. Briddon, Mater. Sci. Forum V 433–436, 527 (2003)CrossRefGoogle Scholar
  17. 17.
    N.S. Savkina, A.S. Tregubova, M.P. Scheglov, V.A. Soloviev, A.A. Volkova, A.A. Lebedev, Mater. Sci. Eng. B91–92, 317 (2002)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Alexander Alexandrovich Lebedev
    • 1
  • P. L. Abramov
    • 1
  • N. V. Agrinskaya
    • 1
  • V. I. Kozub
    • 1
  • A. N. Kuznetsov
    • 1
  • S. P. Lebedev
    • 1
  • G. A. Oganesyan
    • 1
  • L. M. Sorokin
    • 1
  • A. V. Chernyaev
    • 1
  • D. V. Shamshur
    • 1
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

Personalised recommendations