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Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics

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Abstract

The crystalline structure and dielectric properties of BaZr x Ti1−x O3 ceramics with x = 0.05, 0.10, 0.15, and 0.20 were investigated. As zirconium increased, the a-axis lattice constant gradually increased, however, the c-axis lattice constant and c/a ratio gradually decreased. When x = 0.20, the crystal structures of the BZT ceramics are very close to cubic, different from the tetragonal structure when x < 0.20. The temperature dependence of the dielectric constant was studied and an enhanced diffuse phase transition behavior is found to be caused by the increased Zr content. The decreases of coercive electric field and remanent polarization were the result of increase of Zr/Ti ratio in BaZr x Ti1−x O3.

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Acknowledgements

This research is sponsored by a grant for State Key Program of China and by the National Natural Science Foundation of China (No. 60607004). The authors would like to thank Hong Ji for technical support and useful discussion during XRD measurements.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, Chengdu, 610054, P. R. China

    Hongwei Chen, Chuanren Yang, Jun Shi, Jihua Zhang & Wenjian Leng

  2. School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 400050, P. R. China

    Chunlin Fu

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  1. Hongwei Chen
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  2. Chuanren Yang
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  3. Chunlin Fu
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Correspondence to Hongwei Chen.

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Chen, H., Yang, C., Fu, C. et al. Microstructure and dielectric properties of BaZr x Ti1−x O3 ceramics. J Mater Sci: Mater Electron 19, 379–382 (2008). https://doi.org/10.1007/s10854-007-9348-8

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  • DOI: https://doi.org/10.1007/s10854-007-9348-8

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