Dielectric and piezoelectric characterization of PSZT–BT ceramics for capacitor applications
- 82 Downloads
The ceramic compositions (1 − x)Pb0.9875Sr0.0125(Zr0.53Ti0.47)O3 –xBaTiO3 where x = 0.2, 0.4, 0.6 and 0.8, fabricated through solid state reaction method were investigated for phase formation, microstructure, density, dielectric and piezoelectric properties. The X-ray diffraction patterns indicated that introduction of BaTiO3 in isovalent donor Sr modified PZT lattice, diminished the tetragonality. All the specimens were homogenous in nature due to the coarse grains of BaTiO3, which had undergone inter-granular growth and were homogeneously distributed within the PSZT–BT lattice. Introduction of BaTiO3 in PSZT perovskite lattice resulted in enhanced grain growth till x = 0.6 (2.03 μm). Dielectric properties (εRT, Tanδ and T c) were influenced by both BaTiO3 and Sr. The maximum εRT = 1588 and εTc = 10478 were found in 0.2PSZT–0.8BT ceramic system. The optimum dielectric permittivity at room temperature with a low Curie transition temperature was found in 0.2PSZT–0.8BT composition. Piezoelectric properties are very sensitive to isovalent substitutions, where isovalent donor Sr modification and BT concentrations in PZT, affected the piezoelectric properties (k p and d 33) in the ceramic system. Thus, the series PSZT–BT compositions could be ideal candidates for capacitors and suitable sensor applications.
KeywordsPerovskite BaTiO3 Piezoelectric Property Barium Titanate Ceramic System
The authors would like to thank the University of Concepcion for the financial assistance extended in this regard. The authors would also like to thank Ms C N Devi for the technical assistance and valuable suggestions during this work.
- 1.B. Jaffe, W.R. Cook Jr., H. Jaffe, Piezoelectric Ceramics (Academic Press, London, 1971)Google Scholar
- 2.X. Wang, X. Yao, Ferroelectrics 54, 307 (1994)Google Scholar
- 5.B.K. Gan, J.M. Xue, D.M. Wan, J. Wang, Appl. Phys. A 69, 433 (1999)Google Scholar
- 9.K. Okazaki, Am. Ceram. Soc. Bull. 61, 932 (1982)Google Scholar
- 10.T. Ogawa, N. Ujiie, K. Hukuta in Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ISAF, August 1996, 1(1) (1996) 459Google Scholar
- 14.Y. Xu, Ferroelectric Materials and their Applications (North Holland, Amsterdam, The Netherlands, 1991), pp. 110–150Google Scholar
- 27.F. Xia, X. Yao, J. Mater. Sci.: Mat. Electr. 34(14), 3341 (2004)Google Scholar