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Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films

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Abstract

A transparent electrode of β-Ga2O3 films for solar cells, flat panel displays and other devices, which consist in chemically abundant and ecological elements of gallium and oxygen, were grown on quartz or silicon substrates by RF magnetron sputtering using a sintered Ga2O3 target. The impurities of Si or Ge were also added into the grown films. The polycrystalline β-Ga2O3 grew by the thermal annealing after RF sputtering. Optical absorption measurements indicated that the grown β-Ga2O3 film after 600°C annealing have a band gap of about 5 eV.

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Acknowledgement

Part of this work was supported by the Grant-in-Aid for Scientific Research (No. 17710068) from the Ministry of Education, Culture, Sports, Science and Technology of Japan. And the author would like to express thanks to Miss Tomoko Suenaga of the Kumamoto Industrial Research Institute for his help in XRD measurements.

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Authors and Affiliations

  1. Kumamoto National College of Technology, 2659-2, Suya, Koshi, Kumamoto, 861-1102, Japan

    K. Takakura, T. Kudou, K. Hayama, K. Shigaki & H. Ohyama

  2. Koto Manufacturing Co. LTD, Jyonan, Kumamoto, 861-4211, Japan

    K. Kayamoto

  3. Nihon Gas Chemi Co, Nishihara, Kumamoto, 861-2403, Japan

    M. Shibuya

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  1. K. Takakura
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  2. T. Kudou
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  3. K. Hayama
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  4. K. Shigaki
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  5. H. Ohyama
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  6. K. Kayamoto
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  7. M. Shibuya
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Correspondence to K. Takakura.

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Takakura, K., Kudou, T., Hayama, K. et al. Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films. J Mater Sci: Mater Electron 19, 167–170 (2008). https://doi.org/10.1007/s10854-007-9329-y

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  • DOI: https://doi.org/10.1007/s10854-007-9329-y

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