Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films



An attempt has been made to correlate the morphological and electrical properties of RF sputtered aluminum nitride (AlN), with target to substrate distance (D ts) in sputter chamber. AlN films, having thickness around 3,000 Å, were deposited on silicon substrates with different D ts values varying from 5 to 8 cm. XRD results indicated that the crystallinity of c-axis oriented films increase significantly with decrease in D ts and the FTIR absorption band of the films became prominent at shorter D ts. The surface roughness increased from 1.85 to 2.45 nm with that in D ts. A smooth surface with smaller grains was found at shorter D ts. The capacitance–voltage (C–V) measurements revealed that the insulator charge density (Q in) increased from 3.3 × 1011  to 7.3 × 1011 cm−2 and the interface state density (D it) from 1.5 × 1011  to 7.3 × 1011 eV−1cm−2 with the increase in D ts.


Complementary Metal Oxide Semiconductor Aluminum Nitride Interface State Density Flatband Voltage Film Deposition Rate 



The authors would like to thank O. Prakash and P. Parhi for their experimental support in part.


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Centre for Applied Research in ElectronicsIndian Institute of Technology DelhiHauz KhasIndia
  2. 2.School of Electrical and Computer EngineeringUniversity of OklahomaNormanUSA

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