Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films

  • J. P. Kar
  • S. Mukherjee
  • G. Bose
  • S. Tuli


An attempt has been made to correlate the morphological and electrical properties of RF sputtered aluminum nitride (AlN), with target to substrate distance (D ts) in sputter chamber. AlN films, having thickness around 3,000 Å, were deposited on silicon substrates with different D ts values varying from 5 to 8 cm. XRD results indicated that the crystallinity of c-axis oriented films increase significantly with decrease in D ts and the FTIR absorption band of the films became prominent at shorter D ts. The surface roughness increased from 1.85 to 2.45 nm with that in D ts. A smooth surface with smaller grains was found at shorter D ts. The capacitance–voltage (C–V) measurements revealed that the insulator charge density (Q in) increased from 3.3 × 1011  to 7.3 × 1011 cm−2 and the interface state density (D it) from 1.5 × 1011  to 7.3 × 1011 eV−1cm−2 with the increase in D ts.


Complementary Metal Oxide Semiconductor Aluminum Nitride Interface State Density Flatband Voltage Film Deposition Rate 
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The authors would like to thank O. Prakash and P. Parhi for their experimental support in part.


  1. 1.
    Z.R. Song, Y.H. Yu, D.S. Shen, S.C. Zou, Z.H. Zheng, E.Z. Luo, Z. Xie, Mater. Lett. 57, 4643 (2003)CrossRefGoogle Scholar
  2. 2.
    A.N. Cleland, M. Pophristic, I. Ferguson, Appl. Phys. Lett. 79(13), 2070 (2001)CrossRefGoogle Scholar
  3. 3.
    C.D. White, G. Piazza, P.J. Stephanou, A.P. Pisano, Sens. Actuators A 134(1), 239 (2007)CrossRefGoogle Scholar
  4. 4.
    S.R. Mermet, R. Lanz, P. Muralt, Sens. Actuators B 114, 681 (2006)CrossRefGoogle Scholar
  5. 5.
    M. Benetti, D. Cannatà, F. Di Pietrantonio, V. Foglietti, E. Verona, Appl. Phys. Lett. 87, 173504 (2005)CrossRefGoogle Scholar
  6. 6.
    M. Clement, L. Vergara, J. Sangrador, E. Iborra, A. Sanz-Hervás, Ultrasonics 42, 403 (2004)CrossRefGoogle Scholar
  7. 7.
    E. Iborra, J. Olivares, M. Clement, L. Vergara, A. Sanz-Hervás, J. Sangrador, Sens. Actuators A 115, 501 (2004)CrossRefGoogle Scholar
  8. 8.
    M. Ishihara, S.J. Li, H. Yumoto, K. Akashi, Y. Ide, Thin Solid Films 316, 152 (1998)CrossRefGoogle Scholar
  9. 9.
    X.H. Xu, H.S. Wu, C.J. Zhang, Z.H. Jin, Thin Solid Films 388, 62 (2001)CrossRefGoogle Scholar
  10. 10.
    S.H. Lee, K.H. Yoon, D.S. Cheong, J.K. Lee, Thin Solid Films 435, 193 (2003)CrossRefGoogle Scholar
  11. 11.
    D.J. You, S.K. Choi, H.S. Han, J.S. Lee, C.B. Lim, Thin Solid Films 401, 229 (2001)CrossRefGoogle Scholar
  12. 12.
    C.L. Aardahl Jr., J.W. Rogers, H.K. Yun, Y. Ono, D.J. Tweet, S.T. Hsu, Thin Solid Films 346, 174 (1999)CrossRefGoogle Scholar
  13. 13.
    B.S. Sahu, P. Srivastava, H.K. Sehgal, O.P. Agnihotri, Thin Solid Films 415, 53 (2002)CrossRefGoogle Scholar
  14. 14.
    B.S. Sahu, P. Srivastava, O.P. Agnihotri, S.M. Shivaprasad, J. Non-cryst. Solids 351, 771 (2005)CrossRefGoogle Scholar
  15. 15.
    M. Hoitz, S. Zollner, T. Prokofyeva, M. Seon, J. Vanbuskirk, K. Copeland, A. Konkar, S. A. Nikishin, N. N. Faleev, H. Temkin, IEEE International Symposium on Compound Semiconductors 251 (2000)Google Scholar
  16. 16.
    K. Jagannadham, A.K. Sharma, Q. Wei, R. Kalyanraman, J. Narayan, J. Vac. Sci. Technol. A 16(5), 2804 (1998)CrossRefGoogle Scholar
  17. 17.
    J.X. Zhang, H. Cheng, Y.Z. Chen, A. Uddin, S. Yuan, S. J. Geng, S. Zhang, The 2nd International Conference on Technological Advances of Thin Films & Surface Coatings, Singapore, 13–17 July (2004)Google Scholar
  18. 18.
    T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S.A. Nikishin, N.N. Faleev, H. Temkin, S. Zollner, Phys. Rev. B 63, 125313 (2001)CrossRefGoogle Scholar
  19. 19.
    H.Y. Chen, S. Han, C.H. Cheng, H.C. Shih, Appl. Surf. Sci. 228, 128 (2004)CrossRefGoogle Scholar
  20. 20.
    R. Wuhrer, W.Y. Yeung, Scr. Mater. 49, 199 (2003)CrossRefGoogle Scholar
  21. 21.
    E.H. Nicolian, J.R. Brews, Metal Oxide Semiconductor Physics and Technology, (John Wiley and Sons, New York, 1982) pp. 325–426Google Scholar
  22. 22.
    B.J. O’Sullivan, P.K. Hurley, F.N. Cubaynes, P.A. Stolk, F.P. Widdershoven, Microelectron. Reliab. 41, 1053 (2001)CrossRefGoogle Scholar
  23. 23.
    A.U. Ahmed, A. Rys, N. Singh, J.H. Edgar, Z.J. Yu, J. Electrochem. Soc. 139(4), 1146 (1992)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Centre for Applied Research in ElectronicsIndian Institute of Technology DelhiHauz KhasIndia
  2. 2.School of Electrical and Computer EngineeringUniversity of OklahomaNormanUSA

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