Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films
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An attempt has been made to correlate the morphological and electrical properties of RF sputtered aluminum nitride (AlN), with target to substrate distance (D ts) in sputter chamber. AlN films, having thickness around 3,000 Å, were deposited on silicon substrates with different D ts values varying from 5 to 8 cm. XRD results indicated that the crystallinity of c-axis oriented films increase significantly with decrease in D ts and the FTIR absorption band of the films became prominent at shorter D ts. The surface roughness increased from 1.85 to 2.45 nm with that in D ts. A smooth surface with smaller grains was found at shorter D ts. The capacitance–voltage (C–V) measurements revealed that the insulator charge density (Q in) increased from 3.3 × 1011 to 7.3 × 1011 cm−2 and the interface state density (D it) from 1.5 × 1011 to 7.3 × 1011 eV−1cm−2 with the increase in D ts.
KeywordsComplementary Metal Oxide Semiconductor Aluminum Nitride Interface State Density Flatband Voltage Film Deposition Rate
The authors would like to thank O. Prakash and P. Parhi for their experimental support in part.
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