Improvement of Ge/Pd/GaAs ohmic contact by In layer

  • Petr Macháč
  • Petr Sajdl
  • Vladimír Machovič


The presented work describes behaviour of contact structures of the Ge/Pd type with the In layer deposited on the surface of the GaAs substrate plate prior to the metallization. The most suitable structure by contact resistivity and thermal stability is Ge(40 nm)/Pd(20 nm)/In(22 nm). This structure shows minimal contact resistivity 2 × 10−6 Ωcm2. Raman spectroscopy and XPS spectroscopy was used for the contact structure analysis. After thermal annealing, the metallization contains GePd phase and a thin germanium layer remains at the surface. Very slight reaction of indium with the substrate (creation of a ternary phase InGaAs) has been proved. Germanium and palladium diffuse into the GaAs substrate, the surface layer of GaAs is doped by Ge and Pd is built in the GaAs crystal structure instead of arsenic.


GaAs Palladium Raman Spectroscopy Germanium Ohmic Contact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by the Czech Ministry of Education, research project No. MSM-223100002.


  1. 1.
    T.C. Shen, G.B. Gao, H. Morkoc, J. Vac. Sci. Technol. B10, 2113 (1992)Google Scholar
  2. 2.
    D.G. Ivey, S. Eicher, S. Wingar, T. Leste, J. Mater. Sci. Mater. Electron. 8, 63 (1997)CrossRefGoogle Scholar
  3. 3.
    P.H. Hao, L.C. Wang, F. Deng, S.S. Lau, J.Y. Cheng, J. Appl. Phys. 79, 4211 (1996)CrossRefGoogle Scholar
  4. 4.
    Y.G. Wang, D. Wang, D.G. Ivey, J. Appl. Phys. 84, 1310 (1998)CrossRefGoogle Scholar
  5. 5.
    J.L. Lee, Y.T. Kim, J.S. Kwak, H.K. Baik, A. Uedono, S. Tanigawa, J. Appl. Phys. 84, 5460 (1997)CrossRefGoogle Scholar
  6. 6.
    P. Macháč, V. Machovič, Microelectron. Eng. 71, 177 (2004)CrossRefGoogle Scholar
  7. 7.
    L. Hudec, P. Macháč, V. Myslík, M. Vrňata, Laser Phys. 8, 340 (1998)Google Scholar
  8. 8.
    P. Macháč, A. Kanta, V. Peřina, J. Mater. Sci. Mater. Electron. 12, 649 (2001)CrossRefGoogle Scholar
  9. 9.
    P Macháč, V. Machovič, in Proceedings of ASDAM 2004 Conference, IEEE Catalog Number 04EX867 (2004) 41Google Scholar
  10. 10.
    D.A. Tenne, V.A. Haisler, A.K. Bakarov, A.I. Toporov, A.K. Gutakovsky, A.P. Shebanin, D.R.T. Zahn, Phys. Stat. Sol. (B) 224, 25 (2001)CrossRefGoogle Scholar
  11. 11.
    S.C. Jain, M. Willander, H. Maes, Semicond. Sci. Technol. 11, 641 (1996)CrossRefGoogle Scholar
  12. 12.
    S. Reich, A.R. Gon, C. Thomsen, F. Heinrichsdorff, A. Krost, D. Bimberg, Phys. Stat. Sol. (B) 215, 419 (1999)CrossRefGoogle Scholar
  13. 13.
    K. Wuyts, J. Watté, R.E. Silverans, M. Van Hove, G. Borghs, C.L. Palmstrom, L.T. Florez, Appl. Phys. Lett. 64, 2406 (1994)CrossRefGoogle Scholar
  14. 14.
    P. Macháč, V. Peřina, Nonpublished results of RBS measurement on GaPdIn metallizationGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Petr Macháč
    • 1
  • Petr Sajdl
    • 1
  • Vladimír Machovič
    • 1
  1. 1.Department of Solid State EngineeringInstitute of Chemical TechnologyPrague 6Czech Republic

Personalised recommendations