Abstract
Production processes of electrically active defects in degenerate silicon subjected to 2.5 MeV electron irradiation at T = 4.2 K and T = 300 K have been studied. The production rates of primary and secondary defects in irradiated samples are analyzed on the basis of the known properties of radiation-produced defects in Si. It has been demonstrated that a striking difference in the production rates of electrically active defects in n- and p-Si under irradiation at cryogenic temperatures may be related to the different fate of Frenkel pairs in both materials. The production rate of primary defects in degenerate Si was found to be between 1.5 cm−1 and 2 cm−1.
Similar content being viewed by others
References
G.D. Watkins, In: R.W. Cahn P Haasen E.J. Kramer, (eds). Mater. Sci and Technology, Vol. 4–5 (Wiley-VCH, 2005), pp. 105–141
J.W. MacKay, E.E. Klontz, In: F.L. Vook (eds). Radiation Effects in Semiconductors, (Plenum Press, New York, 1968), pp.175–185
J.W. Corbett, J.C. Bourgoin, In: J.H. Crawford Jr, L.M. Slifkin (eds). Point Defects in Solids, (Plenum Press, New York and London,1975), pp. 1–161
V.V. Emtsev, T.V. Mashovets, V.V. Mikhnovich, N.A. Vitovskii. Radiat. Eff. and Def. in Solids (Gordon and Breach Science Publishers, 1989), vol. 111–112, pp.99–118
L.L. Sivo, E.E. Klontz, Phys. Rev. 178, 1264–1273 (1969)
H. Zillgen. PhD Thesis, Rheinisch-Westfälische Technische Hochschule Aachen, Germany (1997)
E.L. Elkin, G.D. Watkins, Phys. Rev. 174, 881–897 (1968)
L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer, Mater. Sci. Forum vol. 38–41 (Trans Tech Publications, Switzerland, 1989), pp. 141–150
J. Adey, R. Jones, D.W. Palmer, P.R. Briddon, S. Öberg, Phys. Rev. B 71, 165211 (2005)
V. Ranki, K. Saarinen, Physica B 340–342, 765–768 (2003)
J.W. Corbett, G.D. Watkins, Phys. Rev. 138, A555–A560 (1965)
Acknowledgement
The work was partly supported by Contract No 506962 (FP6-2002-IST−1), Grant of Federal Agency of Science and Innovations “Scientific School – 5920.2006.2”, and Grant of the Russian Foundation of Basic Research No 06-07-89031-a.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Emtsev, V.V., Ehrhart, P., Poloskin, D.S. et al. Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures. J Mater Sci: Mater Electron 18, 711–714 (2007). https://doi.org/10.1007/s10854-006-9103-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-006-9103-6