Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures
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Production processes of electrically active defects in degenerate silicon subjected to 2.5 MeV electron irradiation at T = 4.2 K and T = 300 K have been studied. The production rates of primary and secondary defects in irradiated samples are analyzed on the basis of the known properties of radiation-produced defects in Si. It has been demonstrated that a striking difference in the production rates of electrically active defects in n- and p-Si under irradiation at cryogenic temperatures may be related to the different fate of Frenkel pairs in both materials. The production rate of primary defects in degenerate Si was found to be between 1.5 cm−1 and 2 cm−1.
KeywordsRemoval Rate Fast Electron Electron Irradiation Cryogenic Temperature Primary Defect
The work was partly supported by Contract No 506962 (FP6-2002-IST−1), Grant of Federal Agency of Science and Innovations “Scientific School – 5920.2006.2”, and Grant of the Russian Foundation of Basic Research No 06-07-89031-a.
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