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Effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt thin-film capacitors

  • Chunlin Fu
  • Fusheng Pan
  • Hongwei Chen
  • Wei Cai
  • Chuanren Yang
Article

Abstract

The effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt ferroelectric thin-film capacitors was investigated at the temperature range from 273 K to 393 K. The results show that the depletion layer width of the as-deposited BST film is about 3–5 times greater than that of the annealed film. For as-deposited samples, the Schottky barrier height increases with increasing temperature and voltage. However, for annealed samples, the Schottky barrier height linearly decreases with increasing voltage and is almost independent upon temperature.

Keywords

Schottky Barrier Height Annealed Film Dynamic Random Access Memory Schottky Emission Depletion Layer Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Chunlin Fu
    • 1
    • 2
  • Fusheng Pan
    • 2
  • Hongwei Chen
    • 3
  • Wei Cai
    • 1
  • Chuanren Yang
    • 3
  1. 1.School of Metallurgical and Materials EngineeringChongqing University of Science and TechnologyChongqingChina
  2. 2.School of Materials Science and EngineeringChongqing UniversityChongqingChina
  3. 3.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science & Technology of ChinaChengduChina

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