Effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt thin-film capacitors
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The effect of annealing on leakage current characteristics of Pt/Ba0.6Sr0.4TiO3/Pt ferroelectric thin-film capacitors was investigated at the temperature range from 273 K to 393 K. The results show that the depletion layer width of the as-deposited BST film is about 3–5 times greater than that of the annealed film. For as-deposited samples, the Schottky barrier height increases with increasing temperature and voltage. However, for annealed samples, the Schottky barrier height linearly decreases with increasing voltage and is almost independent upon temperature.
KeywordsSchottky Barrier Height Annealed Film Dynamic Random Access Memory Schottky Emission Depletion Layer Width
- 1.J. F. Scott, in Ferroelectric Memories (Springer, Berlin, 2000) p. 57, 79, 82, 83, 105Google Scholar