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Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane)

  • Jaehyun Kim
  • Kijung Yong
Article

Abstract

Hafnium silicate (HfSi x O y ) films were deposited by metal-organic chemical vapor deposition (MOCVD) using hafnium tetra-tert-butoxide [HTB, Hf(OC(CH3)3)4] and tetrakis-diethylamino silane [TDEAS, Si(N(C2H5)2)4]. The grown Hf-silicate films showed Hf-rich composition and impurity concentrations less than 1 atomic % (below detection limits). Uniformly deposited films with good step-coverage were obtained on hole-patterned SiO2 substrates. Hafnium silicate films had stable amorphous crystalline structure up to 800 °C annealing and above 900 °C, a tetragonal HfO2 crystal phase was observed. Dielectric constant (k) of the Hf-silicate films was about 15 and flat band voltage (V fb) and hysteresis were very low.

Keywords

Hafnium HfO2 Rapid Thermal Anneal Grown Film Step Coverage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This work was supported by a grant No. (R01-2002-000-00279-0(2002)) from Korea Science & Engineering Foundation and the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J13101), and grant No. RTI04-01-04 from the Regional Technology Innovation Program of the Ministry of Commerce, Industry and Energy (MOCIE).

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.Surface Chemistry Laboratory of Electronic Materials, Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)KyungbukKorea

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