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Study of polycrystalline ZnTe (ZnTe:Cu) thin films for photovoltaic cells

  • Wenwu Wang
  • Gengpei Xia
  • Jiagui Zheng
  • Lianghuan Feng
  • Ruiying Hao
Article

Abstract

In our work, polycrystalline ZnTe and ZnTe:Cu thin films were deposited by vacuum co-evaporation technology. The conductivity–temperature relationship was measured. And the properties of films were studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and differential scanning calorimety (DSC). The results show that the as-deposited films are cubic and that the films annealed at 185°C are cubic and hexagonal. Cu x Te are observed by XRD and XPS. DSC shows ZnTe:Cu film has a peak of decalescence at 170°C, which means that there can be a change. Therefore we assume ZnTe:Cu thin films have structure changes at 185°C and the existence of Cu x Te leads to the abnormal conductivity–temperature relationship. During annealing, copper diffuse from grain boundary to lattices. 1/C 2-V curves show that Cu x Te can form tunneling junction with CdTe, which can improve the back contact.

Keywords

Ohmic Contact ZnTe Abnormal Conductivity Back Contact Differential Scanning Calorimety 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgement

The XPS measurements were performed in the center of Analysis and Test of Sichuan University. The work has been supported by National High Technology Reaearch and Development Program (863 Program) of the Tenth Five-year plan of China under grant number 2001AA513010 and University Doctoral Point Foudation (No. 20050610024).

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Wenwu Wang
    • 1
  • Gengpei Xia
    • 1
  • Jiagui Zheng
    • 1
  • Lianghuan Feng
    • 1
  • Ruiying Hao
    • 1
  1. 1.College of Materials Science and EngineeringSichuan UniversityChengduP. R. China

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