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Optical characterization of ZnO thin films deposited by Sol-gel method

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Abstract

In this paper, ZnO thin film is deposited on Pt/TiO2/SiO2/Si substrate using the sol-gel method and the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films is investigated. The ZnO thin films are crystallized by the heat treatment at over 400°C. The ZnO thin film annealed at 600°C exhibits the greatest c-axis orientation and the Full-Width-Half-Maximum (FWHM) of X-ray peak is 0.4360°. A dense ZnO thin film is deposited by the growth of uniform grains with the increase of annealing temperature but when the annealing temperature increases to 700°C, the surface morphology of ZnO thin film becomes worse by the aggregation of ZnO particles. In the results of surface morphology of ZnO thin film using atomic force microscope (AFM), the surface roughness of ZnO thin film annealed at 600°C is smallest, that is, approximately 1.048 nm. For the PL characteristics of ZnO thin film, it is observed that ZnO thin film annealed at 600°C exhibits the greatest UV (ultraviolet) exciton emission at approximately 378 nm, and the smallest visible emission at approximately 510 nm among ZnO thin films annealed at various temperatures. It is deduced that ZnO thin film annealed at 600°C is formed most stoichiometrically, since the visible emission at approximately 510 nm comes from either oxygen vacancies or impurities.

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Acknowledgement

This work was supported by Inha University Research Grant.

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Authors and Affiliations

  1. Department of Electronics Engineering, Inha University, Inchon, 402-751, Korea

    Byeong Kyun Choi, Dong Hoon Chang & Yung Sup Yoon

  2. Department of Semiconductor Materials & Devices Engineering, Chonnam National University, Yosu, 550-749, Korea

    Seong Jun Kang

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  1. Byeong Kyun Choi
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  2. Dong Hoon Chang
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  3. Yung Sup Yoon
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  4. Seong Jun Kang
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Correspondence to Yung Sup Yoon.

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Choi, B.K., Chang, D.H., Yoon, Y.S. et al. Optical characterization of ZnO thin films deposited by Sol-gel method. J Mater Sci: Mater Electron 17, 1011–1015 (2006). https://doi.org/10.1007/s10854-006-9036-0

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  • DOI: https://doi.org/10.1007/s10854-006-9036-0

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