Abstract
Conductive ruthenium oxide (RuO2) thin films have been deposited at different substrate temperatures on various substrates by radio-frequency (rf) magnetron sputtering and were later annealed at different temperatures. The thickness of the films ranges from 50 to 700 nm. Films deposited at higher temperatures show larger grain size (about 140 nm) with (200) preferred orientation. Films deposited at lower substrate temperature have smaller grains (about 55 nm) with (110) preferred orientation. The electrical resistivity decreases slightly with increasing film thickness but is more influenced by the deposition and annealing temperature. Maximum resistivity is 861 μΩ cm, observed for films deposited at room temperature on glass substrates. Minimum resistivity is 40 μΩ cm observed for a thin film (50 nm) deposited at 540°C on a quartz substrate. Micro-Raman investigations indicate that strain-free well-crystallized thin films are deposited on oxidized Si substrates.
Similar content being viewed by others
References
G.R. Fox, S. Trolier-Mckinstry, S.B. Krupanidhi, J. Mater. Res. 10, 1508 (1995)
T. Sakuma, S. Yamamichi, S. Matsubara, H. Yamaguchi, Y. Miyasaka, Appl. Phys. Lett. 57, 2431 (1990)
Joint Committee on Diffraction Standard (JCPDS)-International Center for Diffraction Data (ICDD), Powder Diffraction File, #40-1290
Y.T. Kim, C.W. Lee, S.K. Kwak, Appl. Phys. Lett. 67, 807 (1995)
K. Sakiyama, S. Onishi, K. Ishihara, K. Orita, J. Electrochem. Soc. 140, 834 (1993)
E. Kolawa, Thin Solid Films 173, 217 (1989)
L. Krusin-Elbaum, M. Wittmer, D.S. Yee, Appl. Phys. Lett. 50, 1879 (1987)
T. Kawahara, M. Yamamuka, A. Yuuki, K. Ono, Jpn. J. Appl. Phys. 35, 4880 (1996)
D.P. Vijay, S.B. Desu, J. Electrochem. Soc. 140, 2640 (1993)
M. Wittmer, J. Vac. Sci. Technol. A2, 273 (1984)
L. Krusin-Elbaum, M. Wittmer, J. Electrochem. Soc. 135, 2610 (1988)
E. Kolawa, F.C.T. So, E.T.-S. Pan, M.-A. Nicolet, Appl. Phys. Lett. 50, 854 (1987)
K.M. Glassford, J.R. Chelikowsky, Phys. Rev. B 47, 1732 (1993)
W.D. Ryden, A.W. Lawson, C.C. Sartain, Phys. Rev. B 1, 1494 (1970)
L.A. Burstill, I.M. Reaney, D.P. Vijay, S.B. Desu, J. Appl. Phys. 75, 1521 (1994)
Q.X. Jia, S.G. Song, X.D. Wu, J.H. Cho, S.R. Foltyn, A.T. Findikoglu, J.L. Smith, Appl. Phys. Lett. 68, 1069 (1996)
H.N. Al-Shareef, K.R. Bellur, O. Auciello, A.I. Kingon, Thin Solid Films 256, 73 (1995)
W.C. Shin, S.G. Yoon, J. Electrochem. Soc. 144, 1055 (1997)
J.G. Lee, Y.T. Kim, S.K. Min, J. Appl. Phys. 77, 5473 (1995)
W.T. Lim, K.R. Cho, C.H. Lee, Thin Solid Films 348, 56 (1999)
J. Malek, A. Watanabe, T. Mitsuhashi, Thermochim. Acta 282/283, 131 (1996)
Q.X. Jia, X.D. Wu, S.R. Foltyn, A.T. Findikoglu, P. Tiwari, J.P. Zheng, T.R. Jow, Appl. Phys. Lett. 67, 1677 (1995)
H. Maiwa, N. Ichinose, K. Okazaki, Jpn. J. Appl. Phys. 33, 5223 (1994)
H. Luan, C.-H. Lee, D.-L. Kwong, Appl. Phys. Lett. 78, 1134 (2001)
H. Zhong, G. Heuss, V. Misra, IEEE Electron. Device Lett. 21, 593 (2000)
Y. Kaga, Y. Abe, H. Yanagisawa, K. Sasaki, Jpn. J. Appl. Phys. 37, 3457 (1998)
J.S. Lee, H.J. Kwon, Y.W. Jeong, H.H. Kim, C.Y. Kim, J. Mater. Res. 11, 2681 (1997)
T.S. Kalkur, Y.C. Lu, Thin Solid Films 205, 266 (1991)
S. Bhaskar, P.S. Dobal, S.B. Majumder, R.S. Katiyar, J. Appl. Phys. 89, 2987 (2001)
P.C. Liao, S.Y. Mar, W.S. Ho, Y.S. Huang, K.K. Tiong, Thin Solid Films 287, 74 (1996)
S. Nakashima, M. Hangyo, IEEE J. Quantum Electron. QE-25, 965 (1989)
Acknowledgements
We would like to thank Mr. S. Reuter and Mr. D. Dahlhaus for having performed Raman spectroscopy and AFM measurements, respectively.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Vayunandana Reddy, Y.K., Mergel, D. Structural and electrical properties of RuO2 thin films prepared by rf-magnetron sputtering and annealing at different temperatures. J Mater Sci: Mater Electron 17, 1029–1034 (2006). https://doi.org/10.1007/s10854-006-9032-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-006-9032-4