Electrical properties of nonalloyed Ni/Au ohmic contacts to laser-irradiated p-GaN

  • Min-Suk Oh
  • Ja-Soon Jang
  • Seong-Ju Park
  • Tae-Yeon Seong


We have investigated the KrF excimer laser-irradiation effect on the electrical properties of nonalloyed Ni/Au contacts to p-GaN. It is shown that the samples that were laser-irradiated in N2 ambient produce higher sheet carrier concentrations and lower sheet resistances as compared with those of the as-grown samples. Consequently, the contacts to the laser-irradiated samples yield significantly low specific contact resistance as compared to the as-grown sample. Experimental and calculation results show that field emission is responsible for the current flow for the N2-irradiated sample. It is, however, shown that for the as-grown sample, the current flow is due to thermionic emission.


Ohmic Contact Contact Resistivity Specific Contact Resistance Electronic Transport Mechanism Effective Skin Depth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was supported by the basic research program of the Korea Science & Engineering Foundation (Grant no. R01-2006-000-10904-0).


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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Min-Suk Oh
    • 1
  • Ja-Soon Jang
    • 2
  • Seong-Ju Park
    • 1
  • Tae-Yeon Seong
    • 2
  1. 1.Department of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangjuKorea
  2. 2.Department of Materials Science and EngineeringKorea UniversitySeoulKorea

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