An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon

  • Saad M. Malik
  • Stephen K. O’Leary


We study the distributions of conduction band and valence band electronic states associated with hydrogenated amorphous silicon. We find that there are substantial deviations from square-root distributions of electronic states, particularly deep within the bands and within the gap region. We clearly identify where these distributions of electronic states exhibit square-root functional dependencies by fitting square-root functional forms to some experimental data. The corresponding DOS effective masses are determined, and are found to be about 2 to 4 times greater than the crystalline silicon case.


Silicon Experimental Data Electronic Material Conduction Band Electronic State 
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Copyright information

© Springer Science + Business Media, Inc. 2005

Authors and Affiliations

  1. 1.Faculty of EngineeringUniversity of ReginaReginaCanada

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