Abstract
We study the distributions of conduction band and valence band electronic states associated with hydrogenated amorphous silicon. We find that there are substantial deviations from square-root distributions of electronic states, particularly deep within the bands and within the gap region. We clearly identify where these distributions of electronic states exhibit square-root functional dependencies by fitting square-root functional forms to some experimental data. The corresponding DOS effective masses are determined, and are found to be about 2 to 4 times greater than the crystalline silicon case.
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Malik, S.M., O’Leary, S.K. An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon. J Mater Sci: Mater Electron 16, 177–181 (2005). https://doi.org/10.1007/s10854-005-6598-1
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DOI: https://doi.org/10.1007/s10854-005-6598-1