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An analysis of the distributions of electronic states associated with hydrogenated amorphous silicon

  • Saad M. Malik
  • Stephen K. O’Leary
Article

Abstract

We study the distributions of conduction band and valence band electronic states associated with hydrogenated amorphous silicon. We find that there are substantial deviations from square-root distributions of electronic states, particularly deep within the bands and within the gap region. We clearly identify where these distributions of electronic states exhibit square-root functional dependencies by fitting square-root functional forms to some experimental data. The corresponding DOS effective masses are determined, and are found to be about 2 to 4 times greater than the crystalline silicon case.

Keywords

Silicon Experimental Data Electronic Material Conduction Band Electronic State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science + Business Media, Inc. 2005

Authors and Affiliations

  1. 1.Faculty of EngineeringUniversity of ReginaReginaCanada

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