Abstract
Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.
Similar content being viewed by others
References
Geim A, Grigorieva I (2013) Van der Waals heterostructures. Nature 499:419–425. https://doi.org/10.1038/nature12385
Novoselov KS, Mishchenko A, Carvalho A, Castro Neto AH (2016) 2D materials and van der Waals heterostructures. Science 353:aac9439. https://doi.org/10.1126/science.aac9439
Zhu W, Park S, Yogeesh MN, Akinwande D (2017) Advancements in 2D flexible nanoelectronics: from material perspectives to RF applications. Flex Print Electron 2:043001. https://doi.org/10.1088/2058-8585/aa84a4
Matsuhisa N, Chen X, Baoc Z, Someya T (2019) Materials and structural designs of stretchable conductors. Chem Soc Rev 48:2946. https://doi.org/10.1039/c8cs00814k
Li X, Tao L, Chen Z, Fang H, Li X, Wang X, Xu J-B, Zhu H (2017) Graphene and related two-dimensional materials: structure-property relationships for electronics and optoelectronics. Appl Phys Rev 4:021306. https://doi.org/10.1063/1.4983646
Thanh TD, Chuong ND, Hien HV, Kshetri T, Tuan LH, Kim NH, Lee JH (2018) Recent advances in two-dimensional transition metal dichalcogenides-graphene heterostructured materials for electrochemical applications. Prog Mat Sci 96:51–85. https://doi.org/10.1016/j.pmatsci.2018.03.007
Miwa JA, Dendzik M, Grønborg SS, Bianchi M, Lauritsen JV, Hofmann P, Ulstrup S (2015) Van der Waals epitaxy of two-dimensional MoS2/graphene heterostructures in a ultra-high vacuum. ACS Nano 9:6502–6510. https://doi.org/10.1021/acsnano.5b02345
Woods JM, Jung Y, Xie YJ, Liu W, Liu Y, Wang H, Cha JJ (2016) One-step synthesis of MoS2/WS2 layered heterostructures and catalytic activity of defective transition metal dichalcogenide films. ACS Nano 10:2004–2009. https://doi.org/10.1021/acsnano.5b06126
Zhang C, Li C, Yu J, Jiang S, Xu S, Yang C, Liu YJ, Gao X, Liu A, Man B (2018) SERS activated platform with three-dimensional hot spots and tunable nanometer gap. Sens Actuat B Chem 258:163–171. https://doi.org/10.1016/j.snb.2017.11.080
Lewin M, Hauer B, Bornhöfft M, Jung L, Benke J, Michel A-KU, Mayer J, Wuttig M, Taubner T (2015) Imaging of phase change materials below a capping layer using correlative infrared near-field microscopy and electron microscopy. Appl Phys Lett 107:151902. https://doi.org/10.1063/1.4933102
Tian W, Yu W, Shi J, Wang Y (2017) The property, preparation and application of topological insulators: a review. Materials 10:814. https://doi.org/10.3390/ma10070814
Khokhriakov D, Cummings AW, Song K et al (2018) Tailoring emergent spin phenomena in Dirac material heterostructures. Sci Adv 4:eaat9349. https://doi.org/10.1126/sciadv.aat9349
Qu D, Hor Y, Xiong J et al (2010) Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3. Science 329:821–824. https://doi.org/10.1126/science.1189792
Chiatti O, Riha C, Lawrenz D et al (2016) 2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes. Sci Rep 6:27483. https://doi.org/10.1038/srep27483
He L, Xiu F, Yu X et al (2012) Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film. Nano Lett 12:1486–1490. https://doi.org/10.1021/nl204234j
Song K, Soriano D, Cummings AW et al (2018) Spin proximity effects in graphene/topological insulator heterostructures. Nano Lett 18:2033–2039. https://doi.org/10.1021/acs.nanolett.7b05482
Zhang L, Yan Y, Wu H-C et al (2016) Gate-tunable tunneling resistance in graphene/topological insulator vertical junctions. ACS Nano 10:3816–3822. https://doi.org/10.1021/acsnano.6b00659
Cao W, Zhang R-X, Tang P, et al (2016) Heavy Dirac fermions in a graphene/topological insulator hetero-junction. 2D Mater 3:034006. https://doi.org/10.1088/2053-1583/3/3/034006
Qiao H, Yuan J, Xu Z et al (2015) Broadband photodetectors based on graphene-Bi2Te3 heterostructure. ACS Nano 9:1886–1894. https://doi.org/10.1021/nn506920z
Vaklinova K, Hoyer A, Burghard M, Kern K (2016) Current-induced spin polarization in topological insulator-graphene heterostructures. Nano Lett 16:2595–2602. https://doi.org/10.1021/acs.nanolett.6b00167
Kim N, Lee P, Kim Y et al (2014) Persistent topological surface state at the interface of Bi2Se3 film grown on patterned graphene. ACS Nano 8:1154–1160. https://doi.org/10.1021/nn405503k
Lin Y, Dimitrakopoulos C, Farmer D et al (2010) Multicarrier transport in epitaxial multilayer graphene. Appl Phys Lett 97:112107. https://doi.org/10.1063/1.3485671
Steinberg H, Gardner D, Lee Y, Jarillo-Herrero P (2010) Surface state transport and ambipolar electric field effect in Bi2Se3 nanodevices. Nano Lett 10:5032–5036. https://doi.org/10.1021/nl1032183
Ren Z, Taskin A, Sasaki S et al (2010) Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se. Phys Rev B 82:241306. https://doi.org/10.1103/PhysRevB.82.241306
Lee P, Jin KH, Sung SJ et al (2015) Proximity effect induced electronic properties of graphene on Bi2Te2Se. ACS Nano 9:10861–10866. https://doi.org/10.1021/acsnano.5b03821
Liu G, Rumyantsev SL, Shur MS, Balandin AA (2013) Origin of 1/f noise in graphene multilayers: surface vs. volume. Appl Phys Lett 102:093111. https://doi.org/10.1063/1.4794843
Bøggild P, Mackenzie DMA, Whelan PR, et al (2017) Mapping the electrical properties of large-area graphene. 2D Mater 4:042003. https://doi.org/10.1088/2053-1583/aa8683
Cultrera A, Serazio D, Zurutuza A et al (2019) Mapping the conductivity of graphene with electrical resistance tomography. Sci Rep 9:10655. https://doi.org/10.1038/s41598-019-46713-8
Peng HL, Dang WH, Cao J et al (2012) Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat Chem 4:281–286. https://doi.org/10.1038/nchem.1277
Min Y, Moon GD, Kim BS et al (2012) Quick, controlled synthesis of ultrathin Bi2Se3 nanodiscs and nanosheets. J Am Chem Soc 134:2872–2875. https://doi.org/10.1021/ja209991z
Hong SS, Kundhikanjana W, Cha JJ et al (2010) Ultrathin topological insulator Bi2Se3 nanoribbons exfoliated by atomic force microscopy. Nano Lett 10:3118–3122. https://doi.org/10.1021/nl101884h
Zhang J, Peng ZP, Soni A et al (2011) Raman spectroscopy of few quintuple layer topological insulator Bi2Se3 nanoplatelets. Nano Lett 11:2407–2414. https://doi.org/10.1021/nl200773n
Ryu S, Maultzsch J, Han MY et al (2011) Raman spectroscopy of lithographically patterned graphene nanoribbons. ACS Nano 5:4123–4130. https://doi.org/10.1021/nn200799y
Ferrari AC, Robertson J (2000) Interpretation of Raman spectra of disordered and amorphous carbon Phys. Rev B 61:14095. https://doi.org/10.1103/PhysRevB.61.14095
Antonova IV, Nebogatikova NA, Kokh KA et al (2020) Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene. Nanotechnology 31:125602. https://doi.org/10.1088/1361-6528/ab5cd5
Piazza A, Giannazzo F, Buscarino G, Fisichella G, La Magna A, Roccaforte F, Cannas M, Gelardi FM, Agnello S (2015) Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere. J Phys Chem C 119:22718–22723. https://doi.org/10.1021/acs.jpcc.5b07301
Liu H, Liu Y, Zhu D (2011) Chemical doping of graphene. J Mater Chem 21:3335–3345. https://doi.org/10.1039/C0JM02922J
Xue L, Zhou P, Zhang CX, He CY, Hao GL, Sun LZ, Zhong JX (2013) First-principles study of native point defects in Bi2Se3. AIP Adv 3:052105. https://doi.org/10.1063/1.4804439
Chae J, Kang S-H, Park SH et al (2019) Closing the surface bandgap in thin Bi2Se3/graphene heterostructures. ACS Nano 13:3931–3939. https://doi.org/10.1021/acsnano.8b07012
Grassi R, Low T, Gnudi A, Baccarani G (2013) Contact-induced negative differential resistance in short-channel graphene FETs IEEE Trans. Electron Devices 60:140–146. https://doi.org/10.1109/TED.2012.2228868
Tran PX (2018) Modulation of negative differential resistance in graphene field-effect transistors by tuning the contact resistances. J Electron Mater 47:5905–5912. https://doi.org/10.1007/s11664-018-6480-6
Sacépé B, Oostinga JB, Li J et al (2011) Gate-tuned normal and superconducting transport at the surface of a topological insulator. Nat Commun 2:575. https://doi.org/10.1038/ncomms1586
Wang S, Li Y, Ng A, Hu Q, Zhou Q, Li X, Liu H (2020) 2D Bi2Se3 van der Waals epitaxy on mica for optoelectronics applications. Nanomaterials 10:1653. https://doi.org/10.3390/nano10091653
Li HD, Wang ZY, Kan X, Guo X, He HT, Wang Z, Wang JN, Wong TL, Wang N, Xie MH (2010) The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator. New J Phys 12:103038. https://doi.org/10.1088/1367-2630/12/10/103038
Kamboj VS, Singha A, Ferrusb T, Beerea HE, Duffyc LB, Hesjedalc T, Barnesa CHW, Ritchie DA (2017) Probing the topological surface state in Bi2Se3 thin films using temperature-dependent terahertz spectroscopy. ACS Photonics 4:2711–2718. https://doi.org/10.1021/acsphotonics.7b00492
Brahlek M, Kim YS, Bansal N, Edrey E, Oh S (2011) Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder. Appl Phys Lett 99:012109. https://doi.org/10.1063/1.3607484
Bianchi M, Guan D, Bao S et al (2010) Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3. Nat Commun 1:128. https://doi.org/10.1038/ncomms1131
Zhang L, Lin B-C, Wu Y-F et al (2017) Electronic coupling between graphene and topological insulator induced anomalous magnetotransport properties. ACS Nano 11:6277–6285. https://doi.org/10.1021/acsnano.7b02494
Dang W, Peng H, Li H et al (2010) Epitaxial heterostructures of ultrathin topological insulator nanoplate and graphene. Nano Lett 10:2870–2876. https://doi.org/10.1021/nl100938e
Zhang C, Liu M, Man BY et al (2014) Facile fabrication of graphene-topological insulator Bi2Se3 hybrid Dirac materials via chemical vapor deposition in Se-rich conditions. Cryst Eng Commun 16:8941–8945. https://doi.org/10.1039/C4CE01269K
Suna Z, Mana B, Yanga C et al (2016) Selenium-assisted controlled growth of graphene–Bi2Se3 nanoplates hybrid Dirac materials by chemical vapor deposition. Appl Surf Sci 365:357–363. https://doi.org/10.1016/j.apsusc.2015.12.212
Acknowledgements
This work was supported by the RFBR Grant Nos. 18-29-12094 and 19-29-12061, the RSF Grant No. 20-42-08004 in the part of graphene synthesis, and state assignment of IGM SB RAS, ISP SB RAS and FSRG-2020-0017. The Raman spectra were registered using the equipment of the Center of collective usage “VTAN” in the ATRC department of NSU.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interest.
Additional information
Handling Editor: Joshua Tong.
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Antonova, I.V., Nebogatikova, N.A., Stepina, N.P. et al. Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility. J Mater Sci 56, 9330–9343 (2021). https://doi.org/10.1007/s10853-021-05836-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10853-021-05836-y