Van der waals BP/InSe heterojunction for tunneling field-effect transistors

Abstract

Introducing heterogeneous architecture is a prospective way to improve tunneling field-effect transistors (TFETs). We investigate the van der Waals (vdW) heterojunction based on monolayer black phosphorene and indium selenide (BP/InSe heterojunction) and the double-gated 10-nm TFETs based on the vdW BP/InSe heterojunction with the contact length and position by using the ab-initio quantum transport simulations. The vdW BP/InSe heterojunction shows a type-II band edge alignment. The optimal vdW BP/InSe heterojunction TFETs have a 1-nm-length BP/InSe heterojunction at the channel’s left and right sites (1L and 1R for short). Novelty, the BP/InSe heterojunction TFETs with 1L and 1R configurations are n- and p-type devices, respectively, and corresponding high on-currents of 240 and 408 μA/μm are obtained for high-performance application (off-current: 0.1 μA/μm) at a very low supply voltage (0.3 V).

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source to drain tunneling window of Vds = 0.3 V; the isovalue of the transmission eigenstates is 0.05 au

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source to drain tunneling window of Vds = 0.3 V

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Acknowledgement

This work was supported by the National Natural Science Foundation of China (Nos. 11704008 and 91964101), Beijing Natural Science Foundation of China (No. 4212046), the Support Plan of Yuyou Youth, Yuyou Innovation Team, and the fund of high-level characteristic research direction from North China University of Technology.

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Correspondence to Hong Li or Jing Lu.

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Li, H., Wang, Q., Xu, P. et al. Van der waals BP/InSe heterojunction for tunneling field-effect transistors. J Mater Sci 56, 8563–8574 (2021). https://doi.org/10.1007/s10853-021-05784-7

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