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Journal of Materials Science

, Volume 53, Issue 12, pp 9099–9106 | Cite as

Characterization of quaternary Zn/Sn-codoped GaN films obtained with Zn x Sn0.04GaN targets at different Zn contents by the RF reactive magnetron sputtering technology

  • Dong-Hau Kuo
  • Yen-Tzu Liu
Electronic materials
  • 268 Downloads

Abstract

Quarternary (Zn, Sn, Ga)N thin films with co-existing a large amount of acceptor and donor were purposely fabricated in order to heavily distort the GaN lattice and to extend the degenerated GaN semiconductor to a different aspect. The ZnSnGaN films were made of reactive sputtering with single cermet targets containing Zn, Sn, Ga, and GaN under the nitridation atmosphere. By varying the Zn content at fixed 4% Sn content, different Zn x Sn0.04Ga0.96−xN targets at x = 0, 0.03, 0.06, and 0.09 were prepared for Zn/Sn-x-GaN films. With increasing the Zn content, Zn/Sn-x-GaN due to the charge compensation changed from semiconducting n type to p type, and from high electron concentration of 4.1 × 1017 cm−3 to high hole concentration of 3.3 × 1017 cm−3. The optical band gap changed from 3.12 to 2.89 eV, related to the formation in ZnGa acceptor and SnGa donor defects. The hetero- and homo-junction diodes were fabricated. The n-Zn0.03Sn0.04GaN/p-Zn0.09Sn0.04GaN homo-junction diode tested at 25 °C had the turn-on voltage of 0.9 V, leakage current density of 6.0×10−5 A/cm2 at − 1 V, breakdown voltage of 4.7 V, current density of 2.4 × 10−2 A/cm2 at 5 V, ideality factor of 3.4, and barrier height of 0.65 eV.

Notes

Acknowledgements

This work was supported by the Ministry of Science and Technology of the Republic of China under Grant Number MOST 104-2221-E-011-169-MY3.

References

  1. 1.
    Shuji N, Takashi M, Masayuki S (1992) Si- and Ge-doped GaN films grown with GaN buffer layers. Jpn J Appl Phys 31:2883–2888CrossRefGoogle Scholar
  2. 2.
    Molina SI, Sánchez AM, Pacheco FJ, Garcıa R, Sánchez-Garcıa MA, Sánchez FJ, Calleja E (1999) The effect of Si doping on the defect structure of GaN/AlN/Si(111). Appl Phys Lett 74:3362–3364CrossRefGoogle Scholar
  3. 3.
    Shikanaia A, Fukahori H, Kawakami Y, Hazu K, Sota T, Mitani T, Mukai T, Fujita S (2003) Optical properties of Si-, Ge- and Sn-doped GaN. Phys Status Solidi (b) 235:26–30CrossRefGoogle Scholar
  4. 4.
    Nakamura S, Mukai T, Senoh M (1994) Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl Phys Lett 64:1687–1689CrossRefGoogle Scholar
  5. 5.
    Sheu JK, Pan CJ, Chi GC, Kuo CH, Wu LW, Chen CH, Chang SJ, Su JK (2002) White-light emission from InGaN–GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer. IEEE Photo Technol Lett 14:450–452CrossRefGoogle Scholar
  6. 6.
    Reshchikov MA, Foussekis M, McNamara JD, Behrends A, Bakin A, Waag A (2012) Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn. J Appl Phys 111:073106CrossRefGoogle Scholar
  7. 7.
    Kim KS, Yang GM, Lee HJ (1999) The study on the growth and properties of Mg doped and Mg-Si codoped p-type GaN. Solid State Electron 43:1807–1812CrossRefGoogle Scholar
  8. 8.
    Katayama-Yoshida H, Kato R, Yamamoto T (2001) New valence control and spin control method in GaN and AlN by codoping and transition atom doping. J Cryst Growth 231:428–436CrossRefGoogle Scholar
  9. 9.
    Ting CW, Thao CP, Kuo DH (2017) Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering. Mater Sci Semicond Proc 59:50–55CrossRefGoogle Scholar
  10. 10.
    Li CC, Kuo DH (2014) Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target. J Mater Sci Mater Electron 25:1404–1409CrossRefGoogle Scholar
  11. 11.
    Tuan TTA, Kuo DH, Chen CC, Yen WC (2014) Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes. J Mater Sci Mater Electron 25:3264–3270CrossRefGoogle Scholar
  12. 12.
    Kuo DH, Tran TTA, Chen CC, Yen WC (2015) Electrical and structural properties of Mg-doped InxGa1−xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering. Mater Sci Eng B 193:13–19CrossRefGoogle Scholar
  13. 13.
    Kuo DH, Li CC, Tran TTA, Yen WC (2015) Effects of Mg doping on the performance of InGaN films made by reactive sputtering. J Electron Mater 44:210–216CrossRefGoogle Scholar
  14. 14.
    Lin K, Kuo DH (2017) Characteristics and electrical properties of reactively sputtered AlInGaN films from three different Al0.05InxGa0.95−xN targets with x = 0.075, 0.15, and 0.25. Mater Sci Semicond Proc 57:63–69CrossRefGoogle Scholar
  15. 15.
    Maeda K, Teramura K, Saito N, Inoue Y, Kobayashi H, Domen K (2006) Overall water splitting using (oxy)nitride photocatalysts. Pure Appl Chem 78:2267–2276Google Scholar
  16. 16.
    Maeda K, Teramura K, Domen K (2008) Effect of post-calcination on photocatalytic activity of (Ga1−xZnx)(N1−xOx) solid solution for overall water splitting under visible light. J Catal 254:198–204CrossRefGoogle Scholar
  17. 17.
    Abdullah H, Kuo DH (2015) Photocatalytic performance of Ag and CuBiS2 nanoparticles-coated SiO2@TiO2 composite sphere under visible and ultraviolet light irradiation for azo dye degradation with the assistance of numerous nano p-n diodes. J Phys Chem C 119:13632–13641CrossRefGoogle Scholar
  18. 18.
    Neugebauer J, Van de Walle CG (1999) Chemical trends for acceptor impurities in GaN. J Appl Phys 85:3003–3005CrossRefGoogle Scholar
  19. 19.
    Lyons JL, Janotti A, Van de Walle CG (2013) Impact of group-II acceptors on the electrical and optical properties of GaN. Jpn J Appl Phys 52:08JJ04CrossRefGoogle Scholar
  20. 20.
    Demchenko DO, Reshchikov MA (2013) Blue luminescence and Zn acceptor in GaN. Phys Rev B 88:115204CrossRefGoogle Scholar
  21. 21.
    Li D, Ma B, Miyagawa R, Hu W, Narukawa M, Miyake H, Hiramatsu K (2009) Photoluminescence study of Si-doped a-plane GaN grown by MOVPE. J Cryst Growth 311:2906–2909CrossRefGoogle Scholar
  22. 22.
    Tuan TTA, Kuo DH, Saragih AD, Li GZ (2017) Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105. Mater Sci Eng B 222:18–25CrossRefGoogle Scholar

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipeiTaiwan

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