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Journal of Materials Science

, Volume 53, Issue 8, pp 5777–5785 | Cite as

Anisotropy effect on strain-induced instability during growth of heteroepitaxial films

  • X. Zhang
  • Y. Wang
  • W. Cai
Interface Behavior

Abstract

The use of misfit strain to improve the electronic performance of semiconductor films is a common strategy in modern electronic and photonic device fabrication. However, pursuing a favorable higher strain could lead to mechanical instability, on which systematic and quantitative understandings are yet to be achieved. In this paper, we investigate the anisotropy effects on strain-induced thin-film surface roughening by phase field modeling coupled with elasticity. We find that compared with films grown along {111} and {100} surfaces, the instability of {110} film occurs at a much lower strain. Our simulations capture the evolution of interface morphology and stress distribution during the roughening process. Similar characterizations are performed for heteroepitaxial growth from a surface pit. Finally, from 3D simulations, we show that the surface roughening pattern on {110} film exhibits a clear in-plane orientation preference, consistent with experimental observations.

Notes

Acknowledgements

X. Zhang acknowledges supports from Samsung Semiconductor Inc. This work is partially supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DE-SC0010412 (W.C.).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2017

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringStanford UniversityStanfordUSA
  2. 2.Research Laboratory of ElectronicsMassachusetts Institute of TechnologyCambridgeUSA

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